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BA591,115

NXP Semiconductors

BA591,115 by NXP Semiconductors

BA591,115 by NXP Semiconductors is a single microwave mixer diode with very high frequency band. It has a max power dissipation of 0.5W and operates b/w -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 31,333 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

$0.053

10k+ parts

$0.048

31,333

-

$0.064

$0.053

$0.048

Verical

USA . 31,078 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.060

31,078

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-

-

$0.060

Distributors (In-Stock)

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Digiode

USA . 917 parts In-Stock

1+ parts

$0.050

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-

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917

$0.050

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.098

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100

$0.098

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Component Sense

UK . 2,408,861 parts In-Stock

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2,408,861

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Martec Srl

Italy . 9,673 parts In-Stock

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9,673

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ComSIT Distribution GmbH

Germany . 6,947 parts In-Stock

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6,947

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Vyrian

USA . 6,590 parts In-Stock

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6,590

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VNN

France . 5,228 parts In-Stock

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5,228

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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Anansix

USA . 1,482 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 516,763 parts In-Stock

1+ parts

$0.045

100+ parts

$0.044

1k+ parts

$0.044

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516,763

$0.045

$0.044

$0.044

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Ampacity Inc.

Singapore . 516,417 parts In-Stock

1+ parts

$0.045

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516,417

$0.045

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Corphita

USA . 1,246 parts In-Stock

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$0.048

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1,246

$0.048

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Component Stockers USA

USA . 3,902 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

$0.040

3,902

$0.050

$0.050

$0.040

$0.040

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

$0.092

10k+ parts

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50

$0.096

-

$0.092

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Continental Prestige Electronics

USA . 4,424 parts In-Stock

1+ parts

$0.098

100+ parts

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$0.096

4,424

$0.098

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-

$0.096

Argo Parts USA

USA . 2,460 parts In-Stock

1+ parts

$0.098

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$0.095

2,460

$0.098

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-

$0.095

Aztec Data Supply Inc.

USA . 2,820 parts In-Stock

1+ parts

$0.120

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2,820

$0.120

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Corohmni

South Africa . 688 parts In-Stock

1+ parts

$0.164

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688

$0.164

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Microchip USA

USA . 4,911 parts In-Stock

1+ parts

$0.325

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4,911

$0.325

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AZTECH Wire

Italy . 754 parts In-Stock

1+ parts

$20.340

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754

$20.340

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Perfect Parts

USA . 762,720 parts In-Stock

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762,720

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S.R.D Solutions

India . 8,000 parts In-Stock

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8,000

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UNI Independent Distributors

Spain . 5,476 parts In-Stock

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5,476

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Overview

Enhance your electronic designs with the BA591,115 by NXP Semiconductors, a top-tier manufacturer known for delivering quality components. This microwave mixer & detector diode, designed for very high frequency applications, offers exceptional performance and reliability. With its small outline package and dual terminals, this diode is easy to integrate into your projects. Experience the benefits of superior signal processing and precise detection, making it an invaluable tool for your applications. Upgrade your electronics today with the BA591,115 and elevate your projects to new heights of efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to high temperatures, making it suitable for various applications.

Frequency Band: VERY HIGH FREQUENCY

Ideal for high frequency applications, ensuring high performance and reliability.

Surface Mount: YES

Facilitates easy installation and integration into electronic circuit boards.

Maximum Diode Capacitance: 1.05 pF

Low capacitance helps in minimizing signal loss and distortion, ensuring high fidelity output.

Minimum Operating Temperature: -65 °C

Allows operation in harsh environments and extreme temperatures.

Terminal Finish: TIN

Provides a reliable and conductive terminal finish for efficient signal transmission.

Maximum Power Dissipation: 0.5 W

Enables handling of high power levels without overheating, ensuring long-term reliability.

Diode Type: MIXER DIODE

Specifically designed for mixing and detecting signals in microwave applications, ensuring accurate and efficient performance.

Technical Specifications

Microwave Mixer & Detector Diodes BA591,115 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.05 pF

Nominal Diode Capacitance:

.8 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BA591,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.60

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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