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MDX654

Texas Instruments

MDX654 by Texas Instruments

MDX654 by Texas Instruments is a surface mount microwave mixer diode with operating frequency range of 25-40 GHz. It features min impedance of 50 ohm and max impedance of 200 ohm, suitable for high-frequency applications in radar systems and communication equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,506 parts In-Stock

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3,506

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Digiode

USA . 903 parts In-Stock

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903

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Distributors (Availability)

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Parana Technologies

USA . 1,929 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

$1.439

10k+ parts

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1,929

$0.065

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$1.439

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DigiPath Technology Company

USA . 272 parts In-Stock

1+ parts

$0.072

100+ parts

$0.066

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272

$0.072

$0.066

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IDEA Electronic Components Group

UK . 1,096 parts In-Stock

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$0.073

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$0.066

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1,096

$0.073

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$0.066

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ChromeModa Solutions

Germany . 579 parts In-Stock

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$0.073

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$0.060

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579

$0.073

$0.060

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One Stop Electronics

USA . 976 parts In-Stock

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$1.010

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976

$1.010

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Ampacity Inc.

Singapore . 739 parts In-Stock

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$1.010

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739

$1.010

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Semicontronic

India . 506 parts In-Stock

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$1.010

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$0.985

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$0.980

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506

$1.010

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$0.980

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AZTECH Wire

Italy . 593 parts In-Stock

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$7.754

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Corphita

USA . 870 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Elevate your electronic designs with the MDX654 by Texas Instruments, the ultimate choice for high-quality microwave mixer and detector diodes. With a reputation for excellence, Texas Instruments delivers unparalleled performance and reliability in every product. The MDX654 offers surface mount capabilities, a wide operating temperature range, and advanced diode technology for frequencies up to 40 GHz. Whether you're working on radar systems, telecommunications, or satellite communications, this diode provides exceptional value, precision, and efficiency for all your applications. Choose Texas Instruments for superior quality and performance in every project.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy installation and integration into existing circuitry, making this product convenient and versatile.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100°C, this product can withstand relatively high heat levels, ensuring reliability and durability in various operating environments.

Minimum Impedance: 50 ohm

Having a low minimum impedance of 50 ohms helps in efficient signal transmission and matching within RF systems, leading to improved performance.

Diode Type: MIXER DIODE

The mixer diode type indicates that this product is specifically designed for mixing applications, ensuring accurate and reliable signal processing in microwave circuits.

Maximum Impedance: 200 ohm

The high maximum impedance of 200 ohms offers flexibility in impedance matching and allows for compatibility with a wide range of RF components and systems.

Minimum Operating Frequency: 25 GHz

The low minimum operating frequency of 25 GHz enables this product to effectively handle high-frequency signals, making it suitable for applications requiring precise RF signal detection.

Diode Element Material: GALLIUM ARSENIDE

Utilizing gallium arsenide as the diode element material offers superior performance characteristics, including high electron mobility and low noise, making this product ideal for demanding microwave applications.

Maximum Operating Frequency: 40 GHz

The high maximum operating frequency of 40 GHz indicates the product's capability to handle extremely high-frequency signals, making it suitable for advanced microwave and RF applications.

Technical Specifications

Microwave Mixer & Detector Diodes MDX654 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Impedance:

200 ohm

Minimum Impedance:

50 ohm

Maximum Operating Frequency:

40 GHz

Minimum Operating Frequency:

25 GHz

Maximum Operating Temperature:

100 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

MDX654 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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