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MDX625

Texas Instruments

MDX625 by Texas Instruments

The Texas Instruments MDX625 is a surface-mount mixer diode with GaAs element. It operates from 25 to 85 GHz, with impedance ranging from 100 to 200 ohm. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.

Median Price

$2.520

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Markertek

USA . 1 parts In-Stock

1+ parts

$2.520

100+ parts

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1

$2.520

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Distributors (In-Stock)

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Digiode

USA . 3,309 parts In-Stock

1+ parts

$2.394

100+ parts

-

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3,309

$2.394

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Vyrian

USA . 7,088 parts In-Stock

1+ parts

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7,088

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Beckwith Electronics

. 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.022

100+ parts

$0.020

1k+ parts

$0.018

10k+ parts

-

60

$0.022

$0.020

$0.018

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Parana Technologies

USA . 1,555 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

$1.491

10k+ parts

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1,555

$0.147

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$1.491

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IDEA Electronic Components Group

UK . 327 parts In-Stock

1+ parts

$0.165

100+ parts

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1k+ parts

$0.148

10k+ parts

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327

$0.165

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$0.148

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ChromeModa Solutions

Germany . 127 parts In-Stock

1+ parts

$0.165

100+ parts

$0.135

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-

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127

$0.165

$0.135

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Corphita

USA . 2,975 parts In-Stock

1+ parts

$2.268

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2,975

$2.268

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DigiPath Technology Company

USA . 1,671 parts In-Stock

1+ parts

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100+ parts

$0.149

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1,671

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$0.149

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Overview

Unlock the potential of your microwave applications with the MDX625 by Texas Instruments. With a reputation for high-quality products, Texas Instruments delivers a surface-mount mixer and detector diode that offers unmatched performance and reliability. From 25 GHz to 85 GHz, this Gallium Arsenide diode provides a wide operating frequency range while maintaining a minimum impedance of 100 ohms. Trust in Texas Instruments to provide you with the tools you need to succeed in your microwave projects.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy and convenient installation onto circuit boards, saving time and effort in the manufacturing process.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand high heat conditions, ensuring reliability and longevity.

Minimum Impedance: 100 ohm

The low minimum impedance of 100 ohms ensures efficient signal transfer and reduces signal loss, leading to better overall performance.

Diode Type: MIXER DIODE

The use of mixer diodes in this product allows for the mixing of multiple input signals, enabling frequency conversion and signal processing, making it versatile for various applications.

Maximum Impedance: 200 ohm

The high maximum impedance of 200 ohms provides flexibility in signal matching and system design, accommodating a wide range of impedance requirements.

Minimum Operating Frequency: 25 GHz

The low minimum operating frequency of 25 GHz makes this product suitable for high-frequency applications, ensuring compatibility with modern communication systems.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the diode element material offers high electron mobility and low noise characteristics, making it ideal for high-frequency and low-power applications.

Maximum Operating Frequency: 85 GHz

With a high maximum operating frequency of 85 GHz, this product is capable of handling extremely high-frequency signals, making it suitable for advanced communication and radar systems.

Technical Specifications

Microwave Mixer & Detector Diodes MDX625 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Impedance:

200 ohm

Minimum Impedance:

100 ohm

Maximum Operating Frequency:

85 GHz

Minimum Operating Frequency:

25 GHz

Maximum Operating Temperature:

125 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

MDX625 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5920-00-722-6931, 5920007226931

NIIN

007226931

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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