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MDX624

Texas Instruments

MDX624 by Texas Instruments

MDX624 by Texas Instruments is a surface mount MIXER DIODE with GaAs diode element. It operates from 25-85 GHz, with impedance range of 100-200 ohm. Ideal for microwave applications requiring high frequency and temperature up to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,654 parts In-Stock

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Digiode

USA . 2,530 parts In-Stock

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One Stop Electronics

USA . 385 parts In-Stock

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$0.010

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385

$0.010

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Parana Technologies

USA . 1,169 parts In-Stock

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$0.016

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$1.408

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DigiPath Technology Company

USA . 2,357 parts In-Stock

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$0.018

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$0.016

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ChromeModa Solutions

Germany . 4,532 parts In-Stock

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$0.015

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IDEA Electronic Components Group

UK . 460 parts In-Stock

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$0.016

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460

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Ampacity Inc.

Singapore . 1,264 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 165 parts In-Stock

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$0.985

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$0.980

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AZTECH Wire

Italy . 521 parts In-Stock

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$7.435

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Corphita

USA . 592 parts In-Stock

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Corohmni

South Africa . 179 parts In-Stock

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Overview

Elevate your electronic designs with the MDX624 by Texas Instruments, a high-quality microwave mixer & detector diode that sets the standard for performance and reliability. Manufactured by the trusted brand Texas Instruments, this surface mount diode offers a wide range of applications from communications to radar systems. With a maximum operating frequency of 85 GHz and a minimum impedance of 100 ohms, the MDX624 delivers unparalleled value and benefits to customers looking for top-notch quality in their projects. Experience the advantage of Texas Instruments' expertise in semiconductor technology with the MDX624.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes it easy to integrate into circuit boards, reducing installation time and simplifying the overall design.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and operate reliably in a wide range of applications.

Minimum Impedance: 100 ohm

The low minimum impedance ensures efficient signal transfer and performance in high-frequency applications.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for frequency mixing applications, making it suitable for radar, telecommunications, and other signal processing systems.

Maximum Impedance: 200 ohm

The high maximum impedance allows for flexibility in matching different circuit requirements, ensuring compatibility with a variety of systems.

Minimum Operating Frequency: 25 GHz

With a low minimum operating frequency, this diode is suitable for a wide range of high-frequency applications, offering versatility and performance.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide is known for its high electron mobility and low noise characteristics, making it ideal for high-frequency mixer diodes where performance is critical.

Maximum Operating Frequency: 85 GHz

The high maximum operating frequency allows for handling of ultra-high frequency signals, making this diode suitable for advanced microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes MDX624 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Impedance:

200 ohm

Minimum Impedance:

100 ohm

Maximum Operating Frequency:

85 GHz

Minimum Operating Frequency:

25 GHz

Maximum Operating Temperature:

125 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

MDX624 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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