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MDX655

Texas Instruments

MDX655 by Texas Instruments

The Texas Instruments MDX655 is a surface-mount microwave mixer diode with a frequency range of 25-40 GHz. It has an impedance range of 50-200 ohm and operates up to 100°C. Ideal for high-frequency applications requiring gallium arsenide diode technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,322 parts In-Stock

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Digiode

USA . 4,567 parts In-Stock

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4,567

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Distributors (Availability)

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Semicontronic

India . 330 parts In-Stock

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$0.010

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$0.010

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$0.010

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330

$0.010

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$0.010

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Parana Technologies

USA . 481 parts In-Stock

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$0.174

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$1.511

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481

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$1.511

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DigiPath Technology Company

USA . 1,458 parts In-Stock

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$0.192

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$0.177

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$0.192

$0.177

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ChromeModa Solutions

Germany . 3,194 parts In-Stock

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$0.196

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$0.161

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3,194

$0.196

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IDEA Electronic Components Group

UK . 2,143 parts In-Stock

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$0.196

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$0.176

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2,143

$0.196

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$0.176

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Ampacity Inc.

Singapore . 544 parts In-Stock

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$1.010

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544

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One Stop Electronics

USA . 1,089 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 863 parts In-Stock

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$7.665

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863

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Corphita

USA . 2,945 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Overview

Experience the superior performance and reliability of the Texas Instruments MDX655 Microwave Mixer & Detector Diode. Manufactured by industry leader Texas Instruments, this diode offers unparalleled quality and precision in a compact surface-mount design. With a wide operating frequency range of 25-40 GHz and a maximum temperature of 100°C, the MDX655 is perfect for a variety of applications. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 100 °C

Ensures reliable performance even in high temperature environments, increasing the versatility of the product.

Minimum Impedance: 50 ohm

Provides compatibility with a wide range of systems and components, allowing for seamless integration into various setups.

Diode Type: MIXER DIODE

Specifically designed for mixing signals, making it ideal for applications that require signal processing or frequency conversion.

Maximum Impedance: 200 ohm

Offers flexibility in impedance matching, allowing for optimized performance in different scenarios and setups.

Minimum Operating Frequency: 25 GHz

Capable of handling high frequency signals, making it suitable for applications that require processing in the GHz range.

Diode Element Material: GALLIUM ARSENIDE

Known for its high electron mobility and reliability, ensuring stable performance and longevity of the product.

Maximum Operating Frequency: 40 GHz

Supports high frequency operations, making it suitable for applications that require processing in the GHz range without compromising performance.

Technical Specifications

Microwave Mixer & Detector Diodes MDX655 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Impedance:

200 ohm

Minimum Impedance:

50 ohm

Maximum Operating Frequency:

40 GHz

Minimum Operating Frequency:

25 GHz

Maximum Operating Temperature:

100 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

MDX655 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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