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MDX653

Texas Instruments

MDX653 by Texas Instruments

Texas Instruments' MDX653 is a surface-mount microwave mixer diode with operating frequency range of 25-40 GHz. It features min impedance of 50 ohm and max temperature of 100°C. Ideal for applications requiring high-frequency mixing and detection in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,560 parts In-Stock

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8,560

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Digiode

USA . 2,683 parts In-Stock

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2,683

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,253 parts In-Stock

1+ parts

$0.010

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1,253

$0.010

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One Stop Electronics

USA . 150 parts In-Stock

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$0.010

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150

$0.010

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Parana Technologies

USA . 2,184 parts In-Stock

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$0.031

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$1.417

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2,184

$0.031

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$1.417

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DigiPath Technology Company

USA . 565 parts In-Stock

1+ parts

$0.034

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$0.032

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565

$0.034

$0.032

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ChromeModa Solutions

Germany . 2,692 parts In-Stock

1+ parts

$0.035

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$0.029

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2,692

$0.035

$0.029

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IDEA Electronic Components Group

UK . 903 parts In-Stock

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$0.035

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$0.032

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903

$0.035

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$0.032

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Semicontronic

India . 1,073 parts In-Stock

1+ parts

$1.010

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$0.985

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$0.980

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1,073

$1.010

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$0.980

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AZTECH Wire

Italy . 811 parts In-Stock

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$14.530

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811

$14.530

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Corphita

USA . 1,632 parts In-Stock

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1,632

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Corohmni

South Africa . 416 parts In-Stock

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Overview

Elevate your projects with the MDX653 by Texas Instruments, a top-of-the-line Microwave Mixer & Detector Diode that delivers unparalleled quality and performance. Manufactured by industry leader Texas Instruments, this surface-mount diode boasts a wide operating frequency range of 25-40 GHz, making it ideal for a variety of applications. With a minimum impedance of 50 ohms and maximum impedance of 200 ohms, this mixer diode offers superior versatility and reliability. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Experience the difference with the MDX653.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, saving time and effort during the assembly process.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this product can withstand heat better than others, ensuring reliable performance even in challenging conditions.

Minimum Impedance: 50 ohm

Having a low minimum impedance allows for efficient signal transmission and reduces signal losses, leading to better overall performance.

Diode Type: MIXER DIODE

The use of mixer diodes enables this product to efficiently mix signals, making it suitable for a wide range of microwave applications.

Maximum Impedance: 200 ohm

The high maximum impedance provides flexibility in terms of signal matching and compatibility with various systems, making this product versatile and adaptable.

Minimum Operating Frequency: 25 GHz

With a low minimum operating frequency, this product can handle high-frequency signals effectively, making it ideal for applications that require precision and accuracy.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the diode element material ensures high performance, reliability, and efficiency in signal processing, enhancing the overall quality of the product.

Maximum Operating Frequency: 40 GHz

The high maximum operating frequency allows for the processing of extremely fast signals, making this product suitable for cutting-edge microwave applications that demand high-speed performance.

Technical Specifications

Microwave Mixer & Detector Diodes MDX653 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Impedance:

200 ohm

Minimum Impedance:

50 ohm

Maximum Operating Frequency:

40 GHz

Minimum Operating Frequency:

25 GHz

Maximum Operating Temperature:

100 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

MDX653 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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