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BAT6202WH6327XTSA1

Infineon Technologies

BAT6202WH6327XTSA1 by Infineon Technologies

Infineon's BAT6202WH6327XTSA1 is a Schottky mixer diode with low barrier type, operating at ultra high frequency. With a max forward voltage of 1V and output current of 0.02A, it is suitable for microwave applications requiring small outline surface mount packages. The diode's max power dissipation is 0.1W, making it ideal for high temperature environments up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,102 parts In-Stock

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VNN

France . 5,661 parts In-Stock

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5,661

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Digiode

USA . 829 parts In-Stock

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829

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Corohmni

South Africa . 788 parts In-Stock

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$0.153

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788

$0.153

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Aztec Data Supply Inc.

USA . 2,510 parts In-Stock

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$0.180

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$0.180

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Modulus Dynamics

Lithuania . 32,345 parts In-Stock

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$0.188

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$0.180

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$0.173

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32,345

$0.188

$0.180

$0.173

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Semicontronic

India . 1,175 parts In-Stock

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$1.010

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$0.985

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$0.980

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1,175

$1.010

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$0.980

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Ampacity Inc.

Singapore . 600 parts In-Stock

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$1.010

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600

$1.010

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AZTECH Wire

Italy . 753 parts In-Stock

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$7.985

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753

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Perfect Parts

USA . 30,892 parts In-Stock

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Argo Parts USA

USA . 4,968 parts In-Stock

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Continental Prestige Electronics

USA . 4,556 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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$0.076

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$0.070

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$0.070

500

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$0.076

$0.070

$0.070

Microchip USA

USA . 279 parts In-Stock

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279

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Corphita

USA . 227 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Experience the next level of performance with the BAT6202WH6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this microwave mixer and detector diode offers unparalleled quality and reliability. From ultra high frequency applications to small outline package style, this product is designed to exceed expectations. With a low barrier Schottky barrier type and maximum power dissipation of 0.1W, customers can expect superior performance and efficiency. Elevate your projects with the BAT6202WH6327XTSA1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and resistant to physical damage.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high-speed data transmission and low signal loss, making it suitable for high-performance applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good electrical conductivity, corrosion resistance, and solderability, ensuring reliable connections and longevity of the product.

Technology: SCHOTTKY

The Schottky diode technology offers fast switching speeds and low forward voltage drop, enabling efficient signal mixing and detection processes.

Technical Specifications

Microwave Mixer & Detector Diodes BAT6202WH6327XTSA1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.6 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.02 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.1 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT6202WH6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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