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BAT62-03WE6327

Infineon Technologies

BAT62-03WE6327 by Infineon Technologies

Infineon's BAT62-03WE6327 is a Schottky mixer diode with low barrier type. It has a max forward voltage of 1V and can handle up to 40V repetitive peak reverse voltage. Ideal for microwave applications due to its small outline package style and high operating temperature of 150°C.

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LWI Electronics Inc

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LIBRA Elektronik GmbH

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VNN

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Vyrian

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ComSIT Distribution GmbH

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Holdelec - ElecDif-Pro

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Digiode

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Sea View Technologies

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Modulus Dynamics

Lithuania . 17,637 parts In-Stock

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$0.107

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Corohmni

South Africa . 41 parts In-Stock

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Ampacity Inc.

Singapore . 1,316 parts In-Stock

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Semicontronic

India . 653 parts In-Stock

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AZTECH Wire

Italy . 804 parts In-Stock

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Andel Nordic

Denmark . 2,363 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

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Lixinc

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Perfect Parts

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Authorized Procurement Solutions

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Alle Elektronik GmbH

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Continental Prestige Electronics

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Corphita

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Bastille Electronics

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Overview

Elevate your electronic designs with the BAT62-03WE6327 from Infineon Technologies, a top-of-the-line Microwave Mixer & Detector Diode. Crafted with precision and expertise, this diode offers unparalleled performance and reliability in a compact, easy-to-install package. Whether you're working on radar systems, communication equipment, or microwave applications, this Schottky technology diode provides low barrier Schottky barrier type and a maximum forward voltage of 1V, ensuring optimal efficiency and functionality. Trust Infineon Technologies to deliver cutting-edge solutions for your next project. Choose quality, choose performance, choose BAT62-03WE6327.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material ensures long-term reliability of the product.

Surface Mount: YES

Enables easy installation on PCBs, saving time and effort during assembly.

Maximum Diode Capacitance: 0.6 pF

Low capacitance allows for high frequency operation, making it suitable for microwave applications.

Package Shape: RECTANGULAR

Rectangular shape provides efficient use of space on the circuit board.

No. of Terminals: 3

Simple design with minimal terminals makes it easy to integrate into circuitry.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliable performance under varying environmental conditions.

Diode Type: MIXER DIODE

Specifically designed for mixing signals in microwave applications, ensuring precise signal processing.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching characteristics, ideal for high frequency applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

Handles high reverse voltages, providing protection in case of voltage spikes.

Diode Element Material: SILICON

Silicon material offers high performance and reliability in electronic components.

Technical Specifications

Microwave Mixer & Detector Diodes BAT62-03WE6327 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.6 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.1 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT62-03WE6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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