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BAT62-03W

Infineon Technologies

BAT62-03W by Infineon Technologies

Infineon Technologies' BAT62-03W is a single-config microwave mixer & detector diode with ultra high frequency range. It has a max diode capacitance of 0.6 pF and can operate at temperatures up to 150°C. This Schottky diode, made of silicon, is commonly used in applications requiring low barrier Schottky barrier type diodes.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Odintec Ltd.

Israel . 429,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 105,505 parts In-Stock

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VNN

France . 3,951 parts In-Stock

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Legend Electronics Inc.

USA . 1,312 parts In-Stock

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Digiode

USA . 507 parts In-Stock

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507

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Bristol Electronics

USA . 479 parts In-Stock

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479

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Vyrian

USA . 185 parts In-Stock

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185

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Nova Conductors

Japan . 35 parts In-Stock

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35

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Distributors (Availability)

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Ampacity Inc.

Singapore . 342 parts In-Stock

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$0.010

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342

$0.010

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Modulus Dynamics

Lithuania . 2,899 parts In-Stock

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$0.013

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$0.012

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$0.012

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2,899

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Aztec Data Supply Inc.

USA . 847 parts In-Stock

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$0.130

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847

$0.130

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Corohmni

South Africa . 522 parts In-Stock

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$0.182

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Semicontronic

India . 2,714 parts In-Stock

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$1.010

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$0.985

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$0.980

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AZTECH Wire

Italy . 293 parts In-Stock

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$18.089

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Andel Nordic

Denmark . 102 parts In-Stock

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102

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Continental Prestige Electronics

USA . 5,218 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kepictronics

USA . 3,130 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,130 parts In-Stock

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Argo Parts USA

USA . 1,987 parts In-Stock

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Corphita

USA . 861 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Discover the ultimate solution for your microwave mixing and detecting needs with the BAT62-03W by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies guarantees top-notch quality and reliability. This ultra-high frequency diode boasts a small outline package shape, making it perfect for space-constrained applications. With its low barrier Schottky barrier type, the BAT62-03W delivers exceptional performance and efficiency, ensuring optimal signal processing. Say goodbye to interference and hello to seamless functionality with this state-of-the-art mixer diode. Experience the difference today and unlock a world of possibilities with the BAT62-03W from Infineon Technologies.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY: This material provides excellent durability and protection for the microwave mixer & detector diodes, making them a reliable choice for long-term use.

Config

SINGLE: The single configuration simplifies the integration process and ensures seamless compatibility with various applications, offering convenience and ease of use.

Frequency Band

ULTRA HIGH FREQUENCY: This capability allows the microwave mixer & detector diodes to operate at extremely high frequencies, enabling them to handle demanding tasks with exceptional accuracy and precision.

Surface Mount

YES: With surface mount compatibility, these diodes can be easily mounted onto circuit boards, facilitating a faster and more efficient assembly process.

Maximum Diode Capacitance

0.6 pF: Having a low maximum capacitance ensures minimal interference or distortion, guaranteeing high-quality signal processing and reliable performance.

Package Shape

RECTANGULAR: The rectangular shape provides a compact and space-saving design, making these diodes suitable for applications where size constraints are a concern.

No. of Terminals

2: This diode's simple two-terminal structure simplifies the installation process and promotes efficient connectivity, allowing for hassle-free integration into various electronic devices.

Package Style (Meter)

SMALL OUTLINE: The small outline package style enhances versatility and compatibility with different equipment, enabling seamless integration into a variety of setups.

Maximum Operating Temperature

150 °C: With an impressive maximum operating temperature of 150°C, these diodes can withstand high heat environments, ensuring reliable performance even under extreme conditions.

Terminal Finish

MATTE TIN: The matte tin terminal finish enhances solderability and corrosion resistance, guaranteeing long-lasting performance and improved durability.

Terminal Position

DUAL: The dual terminal position facilitates easy connections and flexible mounting options, enabling optimal placement and seamless integration within electronic systems.

Maximum Power Dissipation

0.1 W: This diode has a low power dissipation of 0.1 watt, ensuring efficient energy usage and minimizing heat generation, contributing to its overall reliability.

Diode Type

MIXER DIODE: Designed specifically as a mixer diode, this product provides excellent performance characteristics required for various signal mixing applications, making it a perfect choice in such scenarios.

Technology

SCHOTTKY: The Schottky technology employed in this diode ensures fast and accurate switching speed, making it an ideal selection for high-frequency applications that require quick response times.

Terminal Form

GULL WING: The gull-wing terminal form simplifies the soldering process and enhances the diode's mechanical strength, promoting stable connections and ensuring long-term reliability.

Schottky Barrier Type

LOW BARRIER: The low barrier Schottky barrier type enables efficient charge transport with minimal voltage drop, improving overall performance and optimizing energy efficiency.

Diode Element Material

SILICON: Constructed using silicon material, these diodes offer excellent electrical properties, ensuring superior performance and reliability in a wide range of applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAT62-03W attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.6 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.1 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT62-03W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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