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BAT62E6327HTSA1

Infineon Technologies

BAT62E6327HTSA1 by Infineon Technologies

BAT62E6327HTSA1 by Infineon Technologies is a Schottky rectifier diode with 2 elements in anti-parallel connection. It operates in the C band frequency range up to 6 GHz, with a max power dissipation of 0.1 W. This small outline package diode has a low barrier Schottky element material and is suitable for microwave mixer and detector applications.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 169 parts In-Stock

1+ parts

$0.032

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$0.032

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$0.032

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-

169

$0.032

$0.032

$0.032

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Mouser Electronics

USA . 6,790 parts In-Stock

1+ parts

$0.280

100+ parts

$0.129

1k+ parts

$0.125

10k+ parts

$0.103

6,790

$0.280

$0.129

$0.125

$0.103

Arrow

USA . 188 parts In-Stock

1+ parts

$0.290

100+ parts

$0.118

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-

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188

$0.290

$0.118

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Distrelec

Netherlands . 3,000 parts In-Stock

1+ parts

$0.641

100+ parts

$0.500

1k+ parts

$0.359

10k+ parts

$0.315

3,000

$0.641

$0.500

$0.359

$0.315

RS (Exports)

UK . 764 parts In-Stock

1+ parts

$0.980

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

-

764

$0.980

$0.210

$0.190

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Rochester

USA . 5,908 parts In-Stock

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-

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$0.140

1k+ parts

$0.116

10k+ parts

$0.103

5,908

-

$0.140

$0.116

$0.103

Chip1Stop

Japan . 5,160 parts In-Stock

1+ parts

-

100+ parts

$0.105

1k+ parts

$0.099

10k+ parts

$0.098

5,160

-

$0.105

$0.099

$0.098

EBV Elektronik

Germany . 3,000 parts In-Stock

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-

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3,000

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Verical

USA . 188 parts In-Stock

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-

100+ parts

$0.118

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-

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188

-

$0.118

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Bürklin Elektronik

Germany . 78 parts In-Stock

1+ parts

-

100+ parts

$0.270

1k+ parts

$0.212

10k+ parts

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78

-

$0.270

$0.212

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 775 parts In-Stock

1+ parts

$0.066

100+ parts

-

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775

$0.066

-

-

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.163

100+ parts

-

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900

$0.163

-

-

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Maritex

Poland . 2 parts In-Stock

1+ parts

$0.266

100+ parts

$0.203

1k+ parts

$0.166

10k+ parts

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2

$0.266

$0.203

$0.166

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Vyrian

USA . 13,461 parts In-Stock

1+ parts

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13,461

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VNN

France . 3,485 parts In-Stock

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3,485

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.443

3,000

-

-

-

$0.443

Bristol Electronics

USA . 1,819 parts In-Stock

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1,819

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Euro-Tech

UK . 50 parts In-Stock

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50

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Modulus Dynamics

Lithuania . 33,097 parts In-Stock

1+ parts

$0.032

100+ parts

$0.031

1k+ parts

$0.029

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33,097

$0.032

$0.031

$0.029

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Ampacity Inc.

Singapore . 12,307 parts In-Stock

1+ parts

$0.060

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12,307

$0.060

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Corphita

USA . 210 parts In-Stock

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$0.063

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210

$0.063

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.160

100+ parts

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1k+ parts

$0.153

10k+ parts

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2,000

$0.160

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$0.153

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Argo Parts USA

USA . 1,253 parts In-Stock

1+ parts

$0.163

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1k+ parts

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10k+ parts

$0.158

1,253

$0.163

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-

$0.158

Continental Prestige Electronics

USA . 55,665 parts In-Stock

1+ parts

$0.510

100+ parts

$0.235

1k+ parts

$0.137

10k+ parts

$0.114

55,665

$0.510

$0.235

$0.137

$0.114

QUARKTWIN TECHNOLOGY LTD

USA . 26,708 parts In-Stock

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Perfect Parts

USA . 19,078 parts In-Stock

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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GreenTree Electronics

Israel . 1,500 parts In-Stock

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1,500

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

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100+ parts

$0.040

1k+ parts

$0.037

10k+ parts

$0.037

950

-

$0.040

$0.037

$0.037

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.037

10k+ parts

$0.037

950

-

$0.040

$0.037

$0.037

Overview

Elevate your microwave mixing and detection capabilities with the BAT62E6327HTSA1 by Infineon Technologies. Crafted with precision and quality, this cutting-edge diode offers unparalleled performance in the C band frequency range. Whether you're in the field of telecommunications, radar systems, or satellite communications, this anti-parallel connected diode with two elements provides superior reliability and efficiency, giving you the competitive edge you need. Experience the value and benefits of Infineon's advanced technology with the BAT62E6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the mixer & detector diodes.

Frequency Band: C BAND

Optimized for C band frequencies, making it ideal for applications in this range.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, ensuring reliability.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, improving efficiency.

Maximum Operating Frequency: 6 GHz

Suitable for high-frequency applications up to 6 GHz, making it versatile for various communication systems.

Technical Specifications

Microwave Mixer & Detector Diodes BAT62E6327HTSA1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

40 V

Case Connection:

ANODE

Config:

ANTI-PARALLEL CONNECTED, 2 ELEMENTS

Maximum Diode Capacitance:

.6 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Frequency:

6 GHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.02 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.1 W

Qualification:

Not Qualified

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT62E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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