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MMBD353

Onsemi

MMBD353 by Onsemi

The Onsemi MMBD353 is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It comes in a small outline package with gull wing terminals and is surface mountable. This diode has two elements made of silicon, making it ideal for microwave mixing and detecting purposes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,492 parts In-Stock

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Digiode

USA . 2,289 parts In-Stock

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SupplyDigital Components

Austria . 7,599 parts In-Stock

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TANS Electronics

Latvia . 5,337 parts In-Stock

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Problanco Electronics

Mexico . 3,211 parts In-Stock

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Kulean Microsystems

USA . 1,727 parts In-Stock

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Corphita

USA . 1,647 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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Overview

Experience the next level of performance with the MMBD353 by Onsemi. Manufactured with precision and expertise, this Microwave Mixer & Detector Diode offers unparalleled quality and reliability. Its ultra-high frequency capabilities make it ideal for a wide range of applications, ensuring seamless operation and efficiency. With its small outline package and dual terminal position, this diode is versatile and easy to integrate into your projects. Trust in the value and benefits that the MMBD353 brings, and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability in various operating conditions.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high precision and accuracy in microwave applications.

Surface Mount: YES

Being surface mountable makes it easy to integrate into existing circuit designs, saving space and simplifying assembly.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal interference and distortion, leading to high performance in microwave mixing and detection.

Package Shape: RECTANGULAR

The rectangular package shape provides easy handling and mounting, making it convenient for assembly and integration.

No. of Terminals: 3

Having 3 terminals allows for versatile connection options, enabling flexibility in circuit design and functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices and systems.

Terminal Position: DUAL

The dual terminal position offers redundancy and improved signal stability, ensuring reliable performance under varying conditions.

Diode Type: MIXER DIODE

As a mixer diode, this product is specifically designed for signal mixing applications, delivering accurate and efficient mixing performance.

Technology: SCHOTTKY

Utilizing Schottky technology, this product offers fast switching speeds and low forward voltage drop, enhancing overall performance and efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, ensuring stable operation and minimal signal loss.

No. of Elements: 2

With 2 elements, this product offers increased functionality and versatility in microwave mixing and detection applications.

Diode Element Material: SILICON

Silicon diode elements provide high sensitivity and low noise characteristics, contributing to improved signal detection and accuracy.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD353 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MMBD353 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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