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BAR28

STMicroelectronics

BAR28 by STMicroelectronics

BAR28 by STMicroelectronics is a Schottky mixer diode designed for very high to ultra-high frequency applications. It features a max operating temp of 200 °C, 2 pF capacitance, and operates within -65°C to 200°C. Ideal for microwave mixing and detection tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

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Sea View Technologies

USA . 13,321 parts In-Stock

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13,321

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Bristol Electronics

USA . 13,321 parts In-Stock

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13,321

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ComSIT Distribution GmbH

Germany . 6,540 parts In-Stock

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6,540

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ECAB

Sweden . 5,725 parts In-Stock

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5,725

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Digiode

USA . 3,444 parts In-Stock

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3,444

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Vyrian

USA . 3,333 parts In-Stock

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3,333

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Diverse Electronics

Canada . 2,500 parts In-Stock

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2,500

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PC Components Company LLC

USA . 1,198 parts In-Stock

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Standard Data Resources

USA . 409 parts In-Stock

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409

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Anansix

USA . 168 parts In-Stock

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168

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Corel Iberica Componentes, S.L.

Spain . 140 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 79 parts In-Stock

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79

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ACDS - Activité Composants Distribution Service

France . 73 parts In-Stock

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LittleDiode

UK . 12 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,083 parts In-Stock

1+ parts

$0.084

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$0.075

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1,083

$0.084

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$0.075

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MKK Technologies

India . 503 parts In-Stock

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$0.157

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503

$0.157

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DigiPath Technology Company

USA . 503 parts In-Stock

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$0.157

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503

$0.157

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Native Components

USA . 30 parts In-Stock

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$0.811

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$0.811

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Northwest PG Solutions

USA . 528 parts In-Stock

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$0.892

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528

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AZTECH Wire

Italy . 892 parts In-Stock

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$10.440

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Component Stockers USA

USA . 331 parts In-Stock

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$99.990

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Eliminating Global Boundries, Inc

USA . 15,800 parts In-Stock

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Corphita

USA . 3,774 parts In-Stock

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Parana Technologies

USA . 763 parts In-Stock

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$0.100

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Assy Fe

Spain . 140 parts In-Stock

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Overview

Elevate your designs with the BAR28 from STMicroelectronics, a trusted name in innovation. This high-performance microwave mixer and detector diode excels in very to ultra-high frequency applications, offering unmatched reliability and versatility. Crafted with precision in durable glass packaging, it ensures superior performance even under extreme conditions. Experience enhanced signal integrity and efficiency that propel your projects forward—choose BAR28 for quality you can count on.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures excellent thermal stability and durability, making the diode suitable for a variety of environments.

Config: SINGLE

A single configuration simplifies design and integration, catering to customers who need straightforward and efficient solutions.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This frequency range allows the diode to be utilized in advanced communication systems, enhancing signal processing capabilities.

Maximum Diode Capacitance: 2 pF

Low capacitance improves response time and efficiency in high-frequency applications, making this diode ideal for precise mixing and detection.

Package Shape: ROUND

The round shape of the package supports optimal space utilization, particularly in compact designs.

No. of Terminals: 2

Having two terminals contributes to a simple design, facilitating easy integration into circuits.

Package Style (Meter): LONG FORM

The long-form packaging style can help in better heat dissipation and enhances mounting options in various applications.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature increases reliability and allows operation in demanding conditions often found in RF applications.

Minimum Operating Temperature: -65 °C

A wide temperature range extends the application's usability, making it suitable for environments with extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides a good balance between solderability and resistance to oxidation, enhancing long-term performance.

Terminal Position: AXIAL

Axial terminal positioning facilitates easy mounting on PCBs, making assembly simpler and more efficient.

Case Connection: ISOLATED

Isolated case connection improves safety and reliability in various applications, minimizing the risk of unwanted circuit interactions.

Peak Reflow Temperature °C: 260

A high reflow temperature tolerance ensures compatibility with modern reflow soldering processes, promoting manufacturing flexibility.

Diode Type: MIXER DIODE

As a mixer diode, it excels in frequency mixing applications, making it ideal for radio and communication systems.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop enhances efficiency and reduces heat generation during operation, leading to better performance.

Maximum Output Current: 0.015 A

Rated for a maximum output current of 15mA, making it suitable for sensitive applications without risking output overload.

Technology: SCHOTTKY

Schottky technology enables faster switching speeds and lower forward voltage drops compared to conventional diodes, increasing overall efficiency.

Terminal Form: WIRE

Wire terminals provide flexibility in designs and can accommodate various mounting methods, enhancing versatility in applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

The high voltage rating makes it suitable for high-power RF applications while ensuring reliable performance under varied conditions.

Maximum Non Repetitive Peak Forward Current: 0.05 A

This feature offers some headroom for transient conditions, proving beneficial in applications with signal fluctuations.

Diode Element Material: SILICON

Silicon as the diode material provides excellent electrical properties and thermal stability, making it a standard choice for high-performance diodes.

Technical Specifications

Microwave Mixer & Detector Diodes BAR28 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

.05 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.015 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR28 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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