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MMDL301T1

Onsemi

MMDL301T1 by Onsemi

MMDL301T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in very high to ultra high frequency bands, with a max forward voltage of 0.45V and repetitive peak reverse voltage of 30V. Ideal for applications requiring small outline packages and surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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NPI Materials, Inc.

USA . 9,148 parts In-Stock

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Legend Electronics Inc.

USA . 6,138 parts In-Stock

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PC Components Company LLC

USA . 2,926 parts In-Stock

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Atlantic Semiconductor

USA . 2,250 parts In-Stock

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2,250

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Prism Electronics

USA . 2,135 parts In-Stock

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Vyrian

USA . 2,036 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,021 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,224 parts In-Stock

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Bristol Electronics

USA . 1,224 parts In-Stock

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Dan-Mar Components

USA . 1,224 parts In-Stock

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Connector Distribution Corp

USA . 875 parts In-Stock

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875

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Right Parts Inc.

USA . 875 parts In-Stock

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875

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Digiode

USA . 495 parts In-Stock

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495

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Component Stockers USA

USA . 772 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,075 parts In-Stock

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SupplyDigital Components

Austria . 6,174 parts In-Stock

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TANS Electronics

Latvia . 6,112 parts In-Stock

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Problanco Electronics

Mexico . 5,540 parts In-Stock

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Kulean Microsystems

USA . 4,562 parts In-Stock

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Perfect Parts

USA . 3,101 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Corphita

USA . 1,747 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Discover the ultimate solution for your microwave mixing and detecting needs with the MMDL301T1 by Onsemi. Crafted with precision and expertise, this small outline diode offers very high to ultra-high frequency capabilities in a convenient surface-mount package. Whether you're working on communication systems, radar applications, or test equipment, this Schottky diode provides superior performance and reliability. With a maximum forward voltage of only 0.45V and a maximum power dissipation of 0.2W, the MMDL301T1 delivers exceptional value and efficiency to help you achieve your goals effortlessly. Upgrade your projects today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and transport.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band ensures compatibility with various applications requiring high frequency signals.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance helps in minimizing signal distortion and improving overall performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and placement in circuit designs.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, ideal for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMDL301T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMDL301T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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