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MMDL770T1

Onsemi

MMDL770T1 by Onsemi

MMDL770T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 456,500 parts In-Stock

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R&J Components

USA . 9,000 parts In-Stock

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Digiode

USA . 1,682 parts In-Stock

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Prism Electronics

USA . 1,679 parts In-Stock

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Semi Source

USA . 1,365 parts In-Stock

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Vyrian

USA . 447 parts In-Stock

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TANS Electronics

Latvia . 6,335 parts In-Stock

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Corphita

USA . 2,163 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 1,052 parts In-Stock

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UHIMA Technologies

Türkiye . 965 parts In-Stock

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Problanco Electronics

Mexico . 821 parts In-Stock

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SupplyDigital Components

Austria . 337 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MMDL770T1 by Onsemi. This high-quality microwave mixer and detector diode offers unparalleled performance in a compact, easy-to-use package. From very high frequency to ultra high frequency applications, this diode is designed to deliver superior results every time. Whether you're a professional in the field or an enthusiast looking to take your projects to the next level, the MMDL770T1 provides unmatched value, benefits, and advantages that will elevate your work to new heights. Experience the difference with Onsemi's innovative technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, ensuring a longer lifespan for the product.

Config: SINGLE

Simplifies the setup and operation of the diode, making it easier to integrate into electronic systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows the diode to operate effectively in a wide range of frequency bands, making it versatile for various applications.

Surface Mount: YES

Facilitates easy and secure mounting of the diode on circuit boards, improving efficiency in assembly processes.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures minimal signal loss and distortion, contributing to high performance in signal mixing and detection.

Package Shape: RECTANGULAR

Enables compact design and efficient placement of the diode in tight spaces, saving valuable real estate on circuit boards.

No. of Terminals: 2

Simplified terminal configuration facilitates easy connectivity and integration of the diode into electronic circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance even in harsh environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good conductivity and solderability, ensuring secure connections and stable performance.

Terminal Position: DUAL

Dual terminal configuration allows for versatile mounting options and easy integration into different circuit layouts.

Maximum Power Dissipation: 0.2 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring long-term reliability.

Peak Reflow Temperature °C: 235

Withstands high reflow temperatures during assembly processes, ensuring the diode remains intact and functional.

Diode Type: MIXER DIODE

Specifically designed for mixing and detecting signals, making it ideal for applications such as radar systems and communication equipment.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability in signal mixing and detection applications, ensuring consistent performance.

Technical Specifications

Microwave Mixer & Detector Diodes MMDL770T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMDL770T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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