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MMBD101LT1

Onsemi

MMBD101LT1 by Onsemi

MMBD101LT1 by Onsemi is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It features a small outline package with gull wing terminals and can operate at up to 150 °C. This surface-mount diode has a max power dissipation of 0.225 W, making it ideal for microwave mixing and detection in various electronic devices.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

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Rochester

USA . 255,000 parts In-Stock

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Digiode

USA . 765 parts In-Stock

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Vyrian

USA . 857 parts In-Stock

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American Microsemiconductor Inc.

USA . 2,459 parts In-Stock

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Component Electronics Inc.

Canada . 70 parts In-Stock

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Bristol Electronics

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PC Components Company LLC

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Prism Electronics

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J & M Industries LLC

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Ampacity Inc.

Singapore . 254,548 parts In-Stock

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Corphita

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Corohmni

South Africa . 77 parts In-Stock

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Component Stockers USA

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RC Electronics

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Problanco Electronics

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Glotronic Ltd.

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UHIMA Technologies

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Overview

Unleash the power of innovation with the MMBD101LT1 by Onsemi, a top-of-the-line microwave mixer and detector diode that redefines excellence in performance. Designed with precision and expertise by Onsemi, this diode offers ultra-high frequency capabilities and superior quality in a compact package. Ideal for a wide range of applications, this product delivers unmatched value, efficiency, and reliability to customers seeking cutting-edge technology. Elevate your projects to new heights with the MMBD101LT1 and experience the difference of industry-leading innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer product lifespan.

Frequency Band: ULTRA HIGH FREQUENCY

Ideal for high-frequency applications, offering superior performance and signal quality.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds and reduced signal loss.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of operating environments.

Diode Type: MIXER DIODE

Specifically designed for mixing and detecting signals, providing accurate and reliable performance.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD101LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD101LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-01-433-1634, 5961014331634

NIIN

014331634

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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