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SPD121P

Onsemi

SPD121P by Onsemi

SPD121P by Onsemi is a surface mount microwave mixer diode with GaAs element. It operates from 3.9 GHz to 11 GHz, with max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,279 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,838 parts In-Stock

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Kulean Microsystems

USA . 7,287 parts In-Stock

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TANS Electronics

Latvia . 2,134 parts In-Stock

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Corphita

USA . 844 parts In-Stock

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Problanco Electronics

Mexico . 807 parts In-Stock

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UHIMA Technologies

Türkiye . 699 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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Overview

Enhance your microwave circuit designs with the SPD121P by Onsemi, a top-quality mixer diode that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this surface mount diode provides seamless integration into your applications, ensuring optimal functionality. From radar systems to communication devices, the SPD121P excels in a wide range of applications, delivering exceptional value and benefits to customers seeking superior quality components. Upgrade your projects with the SPD121P and experience the difference in performance and efficiency today!

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance even in demanding operating conditions.

Diode Type: MIXER DIODE

Designed specifically for mixing applications, providing efficient signal processing and signal combining capabilities.

Minimum Operating Frequency: 3.9 GHz

Supports operation at low frequencies, making it suitable for a wide range of applications that require signal mixing or detection at lower frequencies.

Diode Element Material: GALLIUM ARSENIDE

Offers high sensitivity and low noise characteristics, making it ideal for high-frequency applications where signal quality is crucial.

Maximum Operating Frequency: 11 GHz

Capable of handling high-frequency signals, making it suitable for applications that require signal mixing or detection at higher frequencies.

Technical Specifications

Microwave Mixer & Detector Diodes SPD121P attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

11 GHz

Minimum Operating Frequency:

3.9 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SPD121P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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