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SPD-122P

Onsemi

SPD-122P by Onsemi

The Onsemi SPD-122P is a surface mount microwave mixer diode with GaAs element. It operates from 3.9 GHz to 11 GHz, ideal for RF applications up to 150 °C. Perfect for high-frequency circuit designs requiring reliable mixing and detection capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,799 parts In-Stock

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Vyrian

USA . 101 parts In-Stock

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SupplyDigital Components

Austria . 6,967 parts In-Stock

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Problanco Electronics

Mexico . 5,555 parts In-Stock

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TANS Electronics

Latvia . 4,292 parts In-Stock

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Kulean Microsystems

USA . 2,154 parts In-Stock

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Corphita

USA . 894 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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Overview

Enhance your microwave circuit designs with the high-quality SPD-122P by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and innovative solutions for microwave mixer and detector diodes. The SPD-122P offers surface mount capability, operating temperatures up to 150 °C, and a wide frequency range from 3.9 GHz to 11 GHz. Whether you're working on radar systems, communication equipment, or test instruments, this diode provides exceptional performance and value for your applications. Elevate your projects with the trusted expertise of Onsemi and the versatility of the SPD-122P.

Feature Benefit Bullets

Surface Mount: YES

This product can be easily mounted on a surface, making it convenient for integration into various electronic devices and systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to function efficiently even under high temperature conditions, ensuring reliability and durability.

Diode Type: MIXER DIODE

The mixer diode type enables this product to perform mixing functions in microwave applications, making it suitable for signal processing and communication systems.

Minimum Operating Frequency: 3.9 GHz

With a low minimum operating frequency, this product can effectively process signals in the GHz range, catering to a wide range of microwave applications.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diode element material offers high performance in microwave applications, providing low noise and high frequency capabilities for reliable signal processing.

Maximum Operating Frequency: 11 GHz

The high maximum operating frequency allows this product to handle signals up to 11 GHz, making it suitable for high-frequency microwave applications such as radar and satellite communications.

Technical Specifications

Microwave Mixer & Detector Diodes SPD-122P attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

11 GHz

Minimum Operating Frequency:

3.9 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SPD-122P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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