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SPD-121M

Onsemi

SPD-121M by Onsemi

The Onsemi SPD-121M is a surface mount microwave mixer diode with GaAs element. It operates from 3.9 GHz to 11 GHz, with max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

Median Price

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Lifecycle Status

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< 1k

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Digiode

USA . 400 parts In-Stock

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Vyrian

USA . 54 parts In-Stock

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Kulean Microsystems

USA . 8,162 parts In-Stock

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Problanco Electronics

Mexico . 7,208 parts In-Stock

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TANS Electronics

Latvia . 7,139 parts In-Stock

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SupplyDigital Components

Austria . 3,335 parts In-Stock

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UHIMA Technologies

Türkiye . 352 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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Corphita

USA . 65 parts In-Stock

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Overview

Experience the superior quality and reliability of the SPD-121M by Onsemi, a leading manufacturer in the industry. This surface mount microwave mixer and detector diode offers unmatched performance with a minimum operating frequency of 3.9 GHz and a maximum operating frequency of 11 GHz. Perfect for a wide range of applications, this diode's gallium arsenide element material ensures optimal efficiency and precision. Trust Onsemi to deliver cutting-edge technology that exceeds expectations, providing you with unparalleled value and benefits for all your electronic needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, making it suitable for compact and densely populated designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand a wide range of environmental conditions and maintain reliable performance.

Diode Type: MIXER DIODE

Mixer diodes are specifically designed for frequency mixing applications, ensuring accurate and efficient signal processing in microwave circuits.

Minimum Operating Frequency: 3.9 GHz

The low minimum operating frequency makes this diode suitable for a wide range of microwave applications, including communication systems and radar.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diodes offer high breakdown voltage and low noise levels, making them ideal for high-frequency applications where performance is critical.

Maximum Operating Frequency: 11 GHz

With a high maximum operating frequency, this diode is capable of handling high-speed signal processing in microwave systems with precision and accuracy.

Technical Specifications

Microwave Mixer & Detector Diodes SPD-121M attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

11 GHz

Minimum Operating Frequency:

3.9 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SPD-121M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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