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SNSR201MXT5G

Onsemi

SNSR201MXT5G by Onsemi

SNSR201MXT5G by Onsemi is a single microwave mixer diode with Schottky technology. It operates in C band to Ku band frequencies, with max forward voltage of 0.32V and output current of 0.05A. Ideal for applications requiring high frequency mixing and detection in compact chip carrier packages.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Flip Electronics

USA . 15,320,000 parts In-Stock

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Vyrian

USA . 1,025 parts In-Stock

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Digiode

USA . 998 parts In-Stock

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Kulean Microsystems

USA . 3,546 parts In-Stock

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SupplyDigital Components

Austria . 3,408 parts In-Stock

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Corphita

USA . 1,845 parts In-Stock

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Problanco Electronics

Mexico . 1,049 parts In-Stock

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UHIMA Technologies

Türkiye . 779 parts In-Stock

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TANS Electronics

Latvia . 455 parts In-Stock

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Corohmni

South Africa . 329 parts In-Stock

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Overview

Discover the power of innovation with the SNSR201MXT5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Microwave Mixer & Detector Diodes like no other. From C Band to Ku Band frequencies, this product offers exceptional performance and reliability. Its advanced technology and superior design ensure maximum efficiency and accuracy in various applications. Experience seamless integration with its surface mount capability and compact chip carrier package. Elevate your projects with the value and benefits that the SNSR201MXT5G provides, setting you apart from the rest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection and durability for the components inside, ensuring long-lasting performance.

Config: SINGLE

Single configuration makes installation and setup simpler compared to more complex configurations, making it user-friendly.

Frequency Band: C BAND TO KU BAND

Wide frequency band coverage allows for versatility in usage across different bands, making it suitable for various applications.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and reducing assembly time.

Maximum Diode Capacitance: 0.2 pF

Low diode capacitance ensures minimal signal loss and distortion, leading to high-quality output.

Maximum Reverse Current: 0.75 uA

Low reverse current minimizes power consumption and heat generation, enhancing efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and orientation on circuit boards, optimizing space utilization.

Reverse Test Voltage: 1.5 V

Higher reverse test voltage provides added protection against voltage spikes and surges.

No. of Terminals: 2

Dual terminals offer a simple connection interface and ensure proper signal transmission.

Package Style (Meter): CHIP CARRIER

Chip carrier package style is compact and lightweight, ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the device can function in cold environments effectively.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold finish provides excellent conductivity and corrosion resistance, ensuring reliable signal transmission.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and ensures secure attachment to the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Short duration at peak reflow temperature prevents component damage during the soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables secure soldering and ensures long-term stability of the connections.

Diode Type: MIXER DIODE

Mixer diode type is specifically designed for mixing different frequency signals, making it suitable for microwave applications.

Maximum Forward Voltage (VF): 0.32 V

Low forward voltage drop minimizes power loss and heat dissipation, improving overall efficiency.

Maximum Output Current: 0.05 A

High output current capability allows for handling of larger signal loads, ensuring consistent performance.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and reduces the risk of lead contamination.

Maximum Repetitive Peak Reverse Voltage: 2 V

High repetitive peak reverse voltage rating ensures the diode can withstand voltage fluctuations without damage.

Diode Element Material: SILICON

Silicon material offers good reliability and performance characteristics, making it a popular choice for diode elements.

Technical Specifications

Microwave Mixer & Detector Diodes SNSR201MXT5G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.32 V

Frequency Band:

C BAND TO KU BAND

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.05 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

2 V

Maximum Reverse Current:

.75 uA

Reverse Test Voltage:

1.5 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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