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1PS88SB82

NXP Semiconductors

1PS88SB82 by NXP Semiconductors

1PS88SB82 by NXP Semiconductors is a Schottky mixer diode with 3 elements, operating in the ultra-high frequency band. It has a max reverse current of 0.2 uA and can handle temperatures from -65 to 125 °C. Ideal for applications requiring high-frequency signal mixing and detection in compact electronic devices.

Median Price

$0.750

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 1,053 parts In-Stock

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$0.750

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$0.375

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$0.150

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1,053

$0.750

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Vyrian

USA . 7,215 parts In-Stock

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EMSNET

USA . 3,707 parts In-Stock

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Anansix

USA . 1,358 parts In-Stock

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Digiode

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VNN

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Nova Conductors

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Distributors (Availability)

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One Stop Electronics

USA . 715 parts In-Stock

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$1.010

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715

$1.010

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Semicontronic

India . 562 parts In-Stock

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$1.010

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$0.985

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$0.980

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562

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Ampacity Inc.

Singapore . 1,558 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 13,313 parts In-Stock

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UNI Independent Distributors

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Corphita

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Perfect Parts

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Supply Digital

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Kepictronics

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Lixinc

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Argo Parts USA

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Aranea Global

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Continental Prestige Electronics

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Overview

Upgrade your electronic devices with the high-quality 1PS88SB82 by NXP Semiconductors. This versatile microwave mixer and detector diode offers ultra-high frequency capabilities, making it perfect for a wide range of applications. With its separate, 3-element configuration and small outline package style, this diode is easy to install and provides reliable performance. Trust in NXP Semiconductors' reputation for excellence in semiconductor manufacturing to deliver a product that meets your needs with precision and efficiency. Experience the value and benefits of the 1PS88SB82 for yourself today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the diodes, making them suitable for various applications.

Config

SEPARATE, 3 ELEMENTS - This configuration allows for efficient mixing and detection of signals, enhancing performance.

Frequency Band

ULTRA HIGH FREQUENCY - Operating in this frequency band ensures high-speed and accurate signal processing.

Surface Mount

YES - The ability to be surface mounted makes installation and integration easier for manufacturers.

Maximum Reverse Current

0.2 uA - Low reverse current helps minimize power consumption and ensures efficient operation.

Package Shape

RECTANGULAR - This shape allows for easy placement and secure mounting in electronic circuits.

Reverse Test Voltage

1 V - With a high reverse test voltage, these diodes can withstand voltage fluctuations without damage.

No. of Terminals

6 - Having 6 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter)

SMALL OUTLINE - The small outline package style saves space and allows for compact design.

Maximum Operating Temperature

125 °C - The high maximum operating temperature ensures reliability in various environmental conditions.

Minimum Operating Temperature

65 °C - The low minimum operating temperature allows for use in extreme cold environments.

Terminal Finish

Tin (Sn) - The tin terminal finish provides good conductivity and protects against corrosion.

Terminal Position

DUAL - Dual terminal positions offer versatility in circuit layout and connections.

Maximum Time At Peak Reflow Temperature (s)

30 - This allows for efficient soldering during manufacturing processes.

Peak Reflow Temperature °C

260 - The high peak reflow temperature ensures secure and reliable solder joints.

Diode Type

MIXER DIODE - Specifically designed for mixing signals, ensuring accurate signal processing.

Maximum Forward Voltage (VF)

0.34 V - Low forward voltage minimizes power losses and improves overall efficiency.

Technology

SCHOTTKY - Schottky technology enhances the diode's performance by reducing switching time and improving efficiency.

Terminal Form

GULL WING - The gull wing terminal form provides mechanical strength and ease of soldering.

No. of Elements

3 - Having 3 elements allows for more complex signal processing and improved performance.

Maximum Repetitive Peak Reverse Voltage

15 V - With a high peak reverse voltage, these diodes can handle high voltage spikes without damage.

Diode Element Material

SILICON - Silicon diode elements provide reliability and stability in various operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes 1PS88SB82 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from NXP Semiconductors

Specs

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.34 V

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1PS88SB82 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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