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NSR15ADXV6T5G

Onsemi

NSR15ADXV6T5G by Onsemi

NSR15ADXV6T5G by Onsemi is a Schottky mixer diode with 2 elements, suitable for medium frequency applications. It has a max forward voltage of 0.68 V and operates in temperatures ranging from -65 to 150 °C. This surface-mount diode has a package style of small outline and is designed for microwave mixing and detection purposes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,578 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 8,072 parts In-Stock

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TANS Electronics

Latvia . 6,401 parts In-Stock

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Corphita

USA . 1,675 parts In-Stock

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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SupplyDigital Components

Austria . 319 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Unlock endless possibilities with the NSR15ADXV6T5G by Onsemi. Trusted for its superior quality and reliability, this microwave mixer & detector diode is designed to elevate your applications in medium frequency bands. With a small outline package and dual terminal position, this product offers ease of use and seamless integration. Experience exceptional performance with a maximum forward voltage of 0.68 V and a technology that ensures optimal efficiency. Elevate your projects with the unmatched value and benefits that only Onsemi can provide. Trust in Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diodes, ensuring a longer lifespan.

Frequency Band: MEDIUM FREQUENCY

Suitable for a wide range of applications in the medium frequency range, making it versatile for various uses.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Maximum Reverse Current: 0.05 uA

Low reverse current helps minimize power loss and improves overall efficiency of the diodes.

Maximum Operating Temperature: 150 °C

Can handle high operating temperatures, making it suitable for use in various environments and conditions.

Minimum Breakdown Voltage: 15 V

High breakdown voltage provides protection against voltage spikes and ensures the diodes can handle varying electrical conditions.

Diode Type: MIXER DIODE

Specifically designed for mixing signals, making it ideal for applications where signal processing and modulation are required.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, improving the overall performance of the diodes.

Technical Specifications

Microwave Mixer & Detector Diodes NSR15ADXV6T5G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

15 V

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

Frequency Band:

MEDIUM FREQUENCY

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.03 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR15ADXV6T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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