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MMBD355LT1G

Onsemi

MMBD355LT1G by Onsemi

MMBD355LT1G by Onsemi is a microwave mixer & detector diode with common anode config and 2 elements. Operating in the ultra high frequency band, it has a max power dissipation of 0.225W. Ideal for applications requiring small outline surface mount diodes in high temperature environments.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,008 parts In-Stock

1+ parts

$0.180

100+ parts

$0.089

1k+ parts

$0.073

10k+ parts

$0.065

4,008

$0.180

$0.089

$0.073

$0.065

Mouser Electronics

USA . 3,755 parts In-Stock

1+ parts

$0.180

100+ parts

$0.082

1k+ parts

$0.074

10k+ parts

$0.065

3,755

$0.180

$0.082

$0.074

$0.065

Rochester

USA . 236,600 parts In-Stock

1+ parts

-

100+ parts

$0.076

1k+ parts

$0.064

10k+ parts

$0.057

236,600

-

$0.076

$0.064

$0.057

Verical

USA . 102,000 parts In-Stock

1+ parts

-

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$0.071

102,000

-

-

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$0.071

Arrow

USA . 9,000 parts In-Stock

1+ parts

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$0.056

9,000

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$0.056

Chip1Stop

Japan . 2,103 parts In-Stock

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2,103

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Distributors (In-Stock)

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Vyrian

USA . 346 parts In-Stock

1+ parts

$0.057

100+ parts

-

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346

$0.057

-

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Digiode

USA . 1,968 parts In-Stock

1+ parts

$0.060

100+ parts

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1,968

$0.060

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IBS Electronics

USA . 105,000 parts In-Stock

1+ parts

-

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$0.069

105,000

-

-

-

$0.069

NAC Semi

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

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$0.091

84,000

-

-

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$0.091

Flip Electronics

USA . 33,000 parts In-Stock

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33,000

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Sea View Technologies

USA . 14,598 parts In-Stock

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14,598

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Bristol Electronics

USA . 14,598 parts In-Stock

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14,598

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Quantum Digital Technology

USA . 3,000 parts In-Stock

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3,000

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Cyclops Electronics Ltd

UK . 2,815 parts In-Stock

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2,815

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Distributors (Availability)

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Corphita

USA . 2,258 parts In-Stock

1+ parts

$0.057

100+ parts

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2,258

$0.057

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Corohmni

South Africa . 187 parts In-Stock

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$0.057

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187

$0.057

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 27,489 parts In-Stock

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27,489

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,470 parts In-Stock

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8,470

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Kulean Microsystems

USA . 7,922 parts In-Stock

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7,922

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A-Z Elektronik GmbH

Germany . 6,539 parts In-Stock

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6,539

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SupplyDigital Components

Austria . 6,362 parts In-Stock

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iodParts Technologies Inc.

India . 2,590 parts In-Stock

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Problanco Electronics

Mexico . 1,951 parts In-Stock

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TANS Electronics

Latvia . 270 parts In-Stock

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270

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RC Electronics

USA . 225 parts In-Stock

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$0.140

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$0.130

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$0.130

225

-

$0.140

$0.130

$0.130

UHIMA Technologies

Türkiye . 61 parts In-Stock

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61

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Overview

Experience the power of innovation with the MMBD355LT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Microwave Mixer & Detector Diodes that offer unparalleled performance and reliability. Ideal for ultra high frequency applications, this diode boasts common anode configuration with 2 elements for seamless integration. Its small outline package body material ensures efficient operation while its matte tin terminal finish guarantees long-lasting durability. Trust Onsemi to provide you with the cutting-edge technology you need to stay ahead in today's competitive market. Elevate your designs with the MMBD355LT1G and unleash the full potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material helps in making the product lightweight and durable, which is ideal for portable or rugged applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient signal mixing and detection, making it suitable for high frequency applications.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band ensures high-speed performance and accurate signal detection, perfect for advanced communication systems.

Surface Mount: YES

Being surface mountable makes installation easy and saves space on the PCB, making it convenient for compact electronic devices.

Maximum Diode Capacitance: 1 pF

With a low diode capacitance of 1 pF, it ensures minimal signal loss and distortion, maintaining signal integrity in high frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy handling and placement on the PCB, optimizing space utilization and simplifying the assembly process.

No. of Terminals: 3

Having 3 terminals provides flexibility in connection options and ensures stable electrical connections for reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style further contributes to space-saving on the PCB and enables a compact design for electronic devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150°C ensures reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature of -55°C, the product can operate efficiently in a wide range of temperature environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and ensures a stable electrical connection, enhancing the overall reliability of the product.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection orientations, allowing for easy integration into different electronic systems.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation of 0.225 W enables the product to handle high-power applications effectively without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, it ensures proper soldering and reliable long-term performance during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient and reliable soldering during the manufacturing process, ensuring product quality.

Diode Type: MIXER DIODE

Being a mixer diode, it is specifically designed for signal mixing and detection applications, providing accurate and reliable performance in communication systems.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy installation and soldering on the PCB, ensuring a secure electrical connection for optimal performance.

No. of Elements: 2

Having 2 elements allows for efficient signal processing and detection, making the product suitable for high-performance applications that require precision.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high reliability and stability, making the product suitable for long-term use in critical electronic systems.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD355LT1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD355LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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