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MMBD101LT1G

Onsemi

MMBD101LT1G by Onsemi

MMBD101LT1G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It features a max diode capacitance of 1 pF and can operate at temperatures up to 150°C. Ideal for microwave applications, this surface mount diode has a small outline package style and matte tin terminal finish.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 10 parts In-Stock

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Adafruit Industries

USA . 50 parts In-Stock

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Arrow

USA . 14,000 parts In-Stock

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DigiKey

USA . 31,025 parts In-Stock

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Mouser Electronics

USA . 15,135 parts In-Stock

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Verical

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Rochester

USA . 78,222 parts In-Stock

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Avnet

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Master Electronics

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Farnell

UK . 5,729 parts In-Stock

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Element14

Singapore . 5,729 parts In-Stock

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Chip1Stop

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Digiode

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Vyrian

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Bristol Electronics

USA . 6,424 parts In-Stock

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$0.111

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$0.045

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NAC Semi

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Dan-Mar Components

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Lantek

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PC Components Company LLC

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Semicontronic

India . 30,867 parts In-Stock

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Ampacity Inc.

Singapore . 30,712 parts In-Stock

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Corphita

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Corohmni

South Africa . 85 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 22,971 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 4,960 parts In-Stock

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Argo Parts USA

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Problanco Electronics

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Kulean Microsystems

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SIE Connect GmbH (Excess)

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Glotronic Ltd.

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TANS Electronics

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Lixinc

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GreenTree Electronics

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UHIMA Technologies

Türkiye . 406 parts In-Stock

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Allen Electronics Distributors

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Overview

Enhance your electronic devices with the MMBD101LT1G by Onsemi! Crafted with precision and expertise, this microwave mixer & detector diode offers unparalleled performance in ultra high-frequency applications. Its innovative design and high-quality materials ensure reliability and durability. Whether you're working on telecommunications, radar systems, or high-speed data networks, this diode will elevate your projects to new heights. Experience the value and benefits of Onsemi's cutting-edge technology with the MMBD101LT1G - the perfect choice for demanding applications where quality and performance are essential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the product suitable for various environments and applications.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band allows for high-speed and efficient performance, making it ideal for applications requiring fast data processing.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal loss and distortion, resulting in accurate and reliable performance.

Package Shape: RECTANGULAR

Rectangular package shape enables easy integration and space-saving design, making it convenient for compact electronic devices.

Diode Type: MIXER DIODE

Mixer diode type offers versatility in signal processing and mixing applications, making the product suitable for a wide range of uses.

Technology: SCHOTTKY

Schottky technology provides high switching speeds and low forward voltage drop, enhancing the efficiency and performance of the product.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD101LT1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD101LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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