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MMBD301

Onsemi

MMBD301 by Onsemi

The Onsemi MMBD301 is a single Schottky mixer diode with ultra high frequency capabilities. Its package is made of plastic/epoxy, featuring a small outline rectangular shape for surface mount applications. With a max diode capacitance of 1.5 pF, it is ideal for microwave mixing and detection in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 53,000 parts In-Stock

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USA . 3,000 parts In-Stock

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3,000

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Digiode

USA . 255 parts In-Stock

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255

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Prism Electronics

USA . 228 parts In-Stock

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228

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Vyrian

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185

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Semi Source

USA . 79 parts In-Stock

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79

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

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$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 1,264 parts In-Stock

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$0.172

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$0.172

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Semicontronic

India . 249 parts In-Stock

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$2.010

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$1.960

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$1.950

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249

$2.010

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$1.950

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AZTECH Wire

Italy . 459 parts In-Stock

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$6.513

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459

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Kepictronics

USA . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 7,135 parts In-Stock

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TANS Electronics

Latvia . 5,095 parts In-Stock

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Continental Prestige Electronics

USA . 5,005 parts In-Stock

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SupplyDigital Components

Austria . 3,878 parts In-Stock

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Argo Parts USA

USA . 3,390 parts In-Stock

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Kulean Microsystems

USA . 2,923 parts In-Stock

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Corphita

USA . 2,824 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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$0.146

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Lucentia Tech

USA . 900 parts In-Stock

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$0.146

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$0.146

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Supply Digital

USA . 380 parts In-Stock

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UHIMA Technologies

Türkiye . 348 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 200 parts In-Stock

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Corohmni

South Africa . 86 parts In-Stock

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Spain . 81 parts In-Stock

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Overview

Experience the superior quality and performance of the MMBD301 by Onsemi, a leading manufacturer in the industry. These ultra-high frequency microwave mixer & detector diodes offer unmatched precision and reliability for various applications. With a compact design and cutting-edge technology, the MMBD301 provides exceptional value and benefits to our customers. Trust Onsemi to deliver top-of-the-line products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the diode, ensuring longer lifespan and better performance.

Config: SINGLE

Single configuration simplifies the setup and operation of the diode, making it easier to use.

Frequency Band: ULTRA HIGH FREQUENCY

Supports ultra high frequency signals, making it suitable for advanced applications that require high frequency operations.

Surface Mount: YES

Surface mount technology allows for easy installation and integration into various circuit boards or systems.

Maximum Diode Capacitance: 1.5 pF

Low capacitance ensures minimal interference with the signal being processed, leading to accurate and reliable performance.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, making it easy to fit into tight spaces or densely packed circuits.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options, enabling compatibility with a wider range of circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for efficient use of PCB real estate.

Terminal Position: DUAL

Dual terminal position provides stability and secure connectivity, reducing the risk of signal loss or interruption.

Diode Type: MIXER DIODE

Designed specifically for mixing signals, this diode type ensures accurate signal processing for various applications.

Technology: SCHOTTKY

Schottky technology offers high switching speeds and low forward voltage drop, leading to efficient signal processing and transmission.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and mounting onto circuit boards, ensuring secure and reliable connections.

Diode Element Material: SILICON

Silicon diode element material provides good thermal conductivity and stability, ensuring consistent performance even under high temperatures.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD301 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MMBD301 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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