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MMBD770T1

Onsemi

MMBD770T1 by Onsemi

MMBD770T1 by Onsemi is a single Schottky mixer diode with 70V max repetitive peak reverse voltage. It operates in very high to ultra high frequency bands, with a max forward voltage of 1V and 1pF diode capacitance. Ideal for microwave applications requiring small outline surface mount packages.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

3,000

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 169 parts In-Stock

1+ parts

$0.024

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-

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169

$0.024

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Vyrian

USA . 1,638 parts In-Stock

1+ parts

$0.025

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1,638

$0.025

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Component Electronics Inc.

Canada . 2,835 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

2,835

$0.770

$0.580

$0.500

-

Bristol Electronics

USA . 13,875 parts In-Stock

1+ parts

-

100+ parts

$0.113

1k+ parts

$0.034

10k+ parts

$0.022

13,875

-

$0.113

$0.034

$0.022

Prism Electronics

USA . 3,635 parts In-Stock

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3,635

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Electronics Depot

USA . 2,869 parts In-Stock

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2,869

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Mil-Aero Solutions, Inc.

USA . 2,787 parts In-Stock

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2,787

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Distributors (Availability)

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Corphita

USA . 911 parts In-Stock

1+ parts

$0.022

100+ parts

-

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911

$0.022

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Corohmni

South Africa . 68 parts In-Stock

1+ parts

$0.025

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68

$0.025

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.035

100+ parts

$0.032

1k+ parts

$0.029

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-

200

$0.035

$0.032

$0.029

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Component Stockers USA

USA . 200 parts In-Stock

1+ parts

$99.990

100+ parts

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200

$99.990

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Perfect Parts

USA . 9,998 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,577 parts In-Stock

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8,577

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Kulean Microsystems

USA . 4,516 parts In-Stock

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4,516

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SupplyDigital Components

Austria . 4,221 parts In-Stock

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TANS Electronics

Latvia . 3,912 parts In-Stock

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3,912

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Problanco Electronics

Mexico . 3,056 parts In-Stock

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3,056

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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792

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Overview

Experience the superior quality and reliability of the MMBD770T1 microwave mixer and detector diode by Onsemi. With a focus on innovation and precision engineering, Onsemi delivers cutting-edge technology for very high frequency to ultra-high frequency applications. The small outline package and surface mount capability make it easy to integrate into your designs, while the Schottky technology ensures optimal performance. Trust in Onsemi's reputation for excellence and choose the MMBD770T1 for your next project. Unlock the potential of your applications with this high-value, high-performance diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Suitable for a wide range of frequencies, making it versatile and ideal for various applications.

Maximum Diode Capacitance: 1 pF

Low capacitance minimizes signal distortion and ensures high signal integrity.

Package Shape: RECTANGULAR

Compact design allows for easy integration into different systems and setups.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good electrical conductivity and solderability for reliable connections.

Maximum Power Dissipation: 0.12 W

Efficiently handles power dissipation to prevent overheating and ensure stable performance.

Diode Type: MIXER DIODE

Designed specifically for mixing signals, ideal for use in microwave applications where signal processing is required.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 70 V

Can withstand high voltage levels, providing protection against reverse currents and ensuring reliability.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD770T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Additional Features:

LOW REVERSE LEAKAGE

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.12 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD770T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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