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MMBD301LT3

Onsemi

MMBD301LT3 by Onsemi

MMBD301LT3 by Onsemi is a single Schottky mixer diode with a max forward voltage of 0.45V and a max repetitive peak reverse voltage of 30V. It operates in the very high frequency to ultra high frequency band, making it suitable for microwave applications requiring small outline surface mount packages. With a max power dissipation of 0.2W and operating temperature up to 125 °C, it offers reliable performance in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 25,000 parts In-Stock

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Bristol Electronics

USA . 10,829 parts In-Stock

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PC Components Company LLC

USA . 10,750 parts In-Stock

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Ashlea Components Ltd

UK . 10,000 parts In-Stock

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 7,497 parts In-Stock

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SupplyDigital Components

Austria . 6,926 parts In-Stock

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Kulean Microsystems

USA . 5,756 parts In-Stock

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TANS Electronics

Latvia . 2,092 parts In-Stock

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Corphita

USA . 2,065 parts In-Stock

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Corohmni

South Africa . 478 parts In-Stock

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Overview

The Onsemi MMBD301LT3 microwave mixer and detector diode is a game-changer in the industry, offering top-notch quality and reliability. Manufactured by Onsemi, a trusted name in the electronics industry, this diode is perfect for applications in very high frequency to ultra-high frequency bands. Its small outline package and gull-wing terminals make it easy to install, while its Schottky technology ensures optimal performance. With a maximum power dissipation of 0.2W and a maximum forward voltage of 0.45V, this diode offers unmatched value and benefits to customers looking for high-quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal performance and insulation, ensuring durability and reliability.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows for use in a wide range of high-frequency applications, making it versatile.

Surface Mount: YES

Enables easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Diode Capacitance: 1.5 pF

Low capacitance helps in maintaining signal integrity and minimizing signal loss.

Package Shape: RECTANGULAR

Facilitates efficient placement on circuit boards and allows for compact designs.

Terminal Finish: TIN LEAD

Ensures good solderability and conductivity for reliable connections.

Maximum Power Dissipation: 0.2 W

Can handle moderate power levels without overheating, ensuring stable operation.

Diode Type: MIXER DIODE

Specifically designed for mixing applications, providing accurate and efficient signal processing.

Technology: SCHOTTKY

Delivers low forward voltage drop and fast switching speed, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 30 V

Offers high voltage tolerance, making it suitable for various high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD301LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD301LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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