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NSR15SDW1T2

Onsemi

NSR15SDW1T2 by Onsemi

NSR15SDW1T2 by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a peak reflow temp of 235 °C. Ideal for microwave applications due to its low capacitance and high reverse current resistance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,784 parts In-Stock

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Digiode

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673

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SupplyDigital Components

Austria . 7,209 parts In-Stock

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TANS Electronics

Latvia . 5,706 parts In-Stock

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Problanco Electronics

Mexico . 4,676 parts In-Stock

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Kulean Microsystems

USA . 2,834 parts In-Stock

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Corphita

USA . 2,482 parts In-Stock

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UHIMA Technologies

Türkiye . 615 parts In-Stock

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Corohmni

South Africa . 271 parts In-Stock

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Overview

Experience superior performance with the NSR15SDW1T2 by Onsemi, a top-quality Microwave Mixer & Detector Diode that offers unmatched reliability and precision. Manufactured by Onsemi, a trusted name in the industry, this product is designed for a wide range of applications, ensuring optimal functionality and efficiency. With its innovative technology and high-quality construction, the NSR15SDW1T2 delivers exceptional value, providing customers with a competitive edge in their projects. Elevate your work with this versatile diode that guarantees long-lasting performance and consistent results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable for long-term use.

Surface Mount: YES

Being surface mountable makes it easier to integrate into circuit boards for compact and efficient designs.

Maximum Diode Capacitance: 1 pF

Low diode capacitance helps in maintaining high frequency performance and signal integrity.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures minimal power loss and efficient operation of the diodes.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environments.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, making them ideal for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes NSR15SDW1T2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.415 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NSR15SDW1T2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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