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MMBD770T1G

Onsemi

MMBD770T1G by Onsemi

MMBD770T1G by Onsemi is a single Schottky mixer diode with a max forward voltage of 1V. It operates in the very high frequency to ultra high frequency band, suitable for microwave applications. This surface-mount diode has a max power dissipation of 0.12W and can withstand temperatures from -55°C to 125°C.

Median Price

$0.065

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 20,109 parts In-Stock

1+ parts

$0.043

100+ parts

$0.040

1k+ parts

$0.037

10k+ parts

$0.035

20,109

$0.043

$0.040

$0.037

$0.035

Mouser Electronics

USA . 16,079 parts In-Stock

1+ parts

$0.100

100+ parts

$0.047

1k+ parts

$0.041

10k+ parts

$0.036

16,079

$0.100

$0.047

$0.041

$0.036

DigiKey

USA . 13,339 parts In-Stock

1+ parts

$0.110

100+ parts

$0.052

1k+ parts

$0.042

10k+ parts

$0.037

13,339

$0.110

$0.052

$0.042

$0.037

Newark

USA . 23,481 parts In-Stock

1+ parts

$0.115

100+ parts

-

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23,481

$0.115

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Rochester

USA . 193,255 parts In-Stock

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-

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$0.042

1k+ parts

$0.035

10k+ parts

$0.031

193,255

-

$0.042

$0.035

$0.031

Verical

USA . 114,000 parts In-Stock

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$0.031

114,000

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$0.031

Element14

Singapore . 47,401 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.054

10k+ parts

$0.053

47,401

-

$0.066

$0.054

$0.053

Farnell

UK . 25,371 parts In-Stock

1+ parts

-

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$0.029

10k+ parts

$0.027

25,371

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$0.029

$0.027

Chip1Stop

Japan . 20,214 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.055

10k+ parts

$0.040

20,214

-

$0.065

$0.055

$0.040

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Digiode

USA . 620 parts In-Stock

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$0.028

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620

$0.028

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Vyrian

USA . 2,255 parts In-Stock

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$0.029

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2,255

$0.029

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NAC Semi

USA . 288,000 parts In-Stock

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$0.086

288,000

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$0.086

Flip Electronics

USA . 117,000 parts In-Stock

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.069

6,000

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$0.069

EMSNET

USA . 2,150 parts In-Stock

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2,150

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Prism Electronics

USA . 1,024 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,732 parts In-Stock

1+ parts

$0.026

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1,732

$0.026

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Corohmni

South Africa . 122 parts In-Stock

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$0.029

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122

$0.029

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.152

100+ parts

$0.138

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$0.125

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200

$0.152

$0.138

$0.125

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Continental Prestige Electronics

USA . 13,239 parts In-Stock

1+ parts

$0.288

100+ parts

$0.099

1k+ parts

$0.056

10k+ parts

$0.037

13,239

$0.288

$0.099

$0.056

$0.037

Perfect Parts

USA . 76,692 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,136 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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Lixinc

USA . 15,029 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,810 parts In-Stock

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Problanco Electronics

Mexico . 3,795 parts In-Stock

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Kulean Microsystems

USA . 1,209 parts In-Stock

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SupplyDigital Components

Austria . 909 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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383

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Overview

Looking for top-quality microwave mixer and detector diodes? Look no further than the MMBD770T1G by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers unmatched reliability and precision in every product. Ideal for very high frequency to ultra high frequency applications, this diode offers exceptional performance and value. Whether you're in the telecommunications industry or working on radar systems, the MMBD770T1G is the perfect solution for your needs. Trust Onsemi to provide you with the best in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and resistance to environmental factors, making this product suitable for a variety of applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band allows for versatile use in high-frequency applications, providing flexibility and functionality.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures fast switching speeds and minimal signal interference, making this product ideal for high-frequency applications.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in a variety of environments, increasing the product's longevity and efficiency.

Technology: SCHOTTKY

Schottky technology offers low forward voltage and fast switching speeds, enhancing the product's performance and efficiency in high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

High reverse voltage rating ensures protection against voltage spikes, making this product a reliable choice for demanding operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD770T1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Additional Features:

LOW REVERSE LEAKAGE

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.12 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD770T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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