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NSR15SDW1T1

Onsemi

NSR15SDW1T1 by Onsemi

NSR15SDW1T1 by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and forward voltage of 0.415V. It operates b/w -65 to 150 °C, has a package style of small outline, and is suitable for microwave applications requiring low diode capacitance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,985 parts In-Stock

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4,985

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Digiode

USA . 658 parts In-Stock

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658

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Distributors (Availability)

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AZTECH Wire

Italy . 1,220 parts In-Stock

1+ parts

$18.900

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1,220

$18.900

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TANS Electronics

Latvia . 8,180 parts In-Stock

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8,180

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Problanco Electronics

Mexico . 7,265 parts In-Stock

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7,265

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SupplyDigital Components

Austria . 2,966 parts In-Stock

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2,966

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Kulean Microsystems

USA . 2,780 parts In-Stock

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2,780

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Corphita

USA . 2,001 parts In-Stock

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2,001

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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948

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Corohmni

South Africa . 128 parts In-Stock

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Overview

Experience the unmatched quality of the NSR15SDW1T1 by Onsemi, a leading manufacturer in the industry of Microwave Mixer & Detector Diodes. This versatile product offers exceptional value with its innovative design and reliable performance. Ideal for a wide range of applications, this diode boasts a compact package body material and separate configuration with 2 elements for maximum efficiency. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and provides customers with unparalleled benefits and advantages. Elevate your projects with the NSR15SDW1T1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and reliability of the product.

Surface Mount: YES

Being surface mountable makes it easy to integrate the product into various electronic devices and systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh operating conditions effectively.

Technology: SCHOTTKY

Schottky diode technology offers high efficiency, fast switching speed, and low forward voltage drop, making it ideal for mixer applications.

Technical Specifications

Microwave Mixer & Detector Diodes NSR15SDW1T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.415 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR15SDW1T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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