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MMBD353LT1

Onsemi

MMBD353LT1 by Onsemi

MMBD353LT1 by Onsemi is a series connected, 2-element mixer diode with ultra high frequency band. It has a max diode capacitance of 1 pF and operates at up to 125 °C. Ideal for microwave applications requiring small outline surface mount packages.

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9

In-Stock Inventory

1k+

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Bristol Electronics

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Microfarads

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Vyrian

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Odintec Ltd.

Israel . 2,000 parts In-Stock

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Digiode

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Legend Electronics Inc.

USA . 1,309 parts In-Stock

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Semi Source

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Extreme Components

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Manoshevitz Elec. Sales

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Kulean Microsystems

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Speed Components Ltd (Excess)

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ChipTracer

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TANS Electronics

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Problanco Electronics

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Corohmni

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Overview

Enhance your microwave applications with the MMBD353LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products like this Microwave Mixer & Detector Diode. Offering ultra high frequency capabilities and a compact small outline package, this diode provides superior performance and reliability for your projects. With a maximum power dissipation of 0.225 W and a terminal finish of Tin/Lead (Sn/Pb), the MMBD353LT1 is designed to meet your needs efficiently. Upgrade your designs today with this high-performing diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the internal components of the diodes, making it ideal for long-term use.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency capability allows for high-speed data processing and communication, making this product suitable for advanced microwave applications.

Surface Mount: YES

The surface mount feature makes installation easy and reduces the overall size of the product, making it suitable for compact designs.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal signal loss and high efficiency, making this product perfect for sensitive microwave applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuits and ensures a clean and organized layout, making it convenient for assembly.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in demanding environments, making this product a dependable choice.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent conductivity and corrosion resistance, ensuring stable connections for optimal performance.

Maximum Power Dissipation: 0.225 W

The high power dissipation capability allows the diodes to handle high power levels without overheating, making them suitable for demanding applications.

Peak Reflow Temperature: 235 C

The high peak reflow temperature ensures secure soldering during assembly, resulting in reliable connections and overall product durability.

Diode Type: MIXER DIODE

The mixer diode type allows for signal mixing and detection, making this product versatile and suitable for various microwave functions.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD353LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD353LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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