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MMBD353LT1G

Onsemi

MMBD353LT1G by Onsemi

MMBD353LT1G by Onsemi is a series connected, center tap diode with 2 elements. It operates in the ultra high frequency band and has a max diode capacitance of 1 pF. This small outline mixer diode is suitable for microwave applications with an operating temperature range from -55 to 150°C.

Median Price

$0.100

Lifecycle Status

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1k+

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Arrow

USA . 18,000 parts In-Stock

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$0.087

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$0.086

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$0.086

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$0.085

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$0.087

$0.086

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$0.085

DigiKey

USA . 7,615 parts In-Stock

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$0.100

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$0.050

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$0.040

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$0.036

7,615

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$0.050

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$0.036

Mouser Electronics

USA . 5,187 parts In-Stock

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$0.100

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$0.045

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$0.040

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$0.036

5,187

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$0.045

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$0.036

Adafruit Industries

USA . 61 parts In-Stock

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$0.152

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$0.138

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$0.125

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61

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Future Electronics

Canada . 36,000 parts In-Stock

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Avnet

USA . 33,000 parts In-Stock

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Verical

USA . 18,000 parts In-Stock

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$0.085

Chip1Stop

Japan . 18,000 parts In-Stock

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-

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$0.313

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$0.311

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$0.309

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Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Digiode

USA . 929 parts In-Stock

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Vyrian

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IBS Electronics

USA . 54,000 parts In-Stock

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NAC Semi

USA . 45,000 parts In-Stock

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Flip Electronics

USA . 12,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 2,986 parts In-Stock

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Sea View Technologies

USA . 2,668 parts In-Stock

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Bristol Electronics

USA . 2,668 parts In-Stock

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Microfarads

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PC Components Company LLC

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Corohmni

South Africa . 65 parts In-Stock

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Corphita

USA . 734 parts In-Stock

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Advanced Electronics

New Zealand . 61 parts In-Stock

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Component Stockers USA

USA . 62,660 parts In-Stock

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$0.240

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$0.110

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$0.070

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Perfect Parts

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SupplyDigital Components

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A-Z Elektronik GmbH

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Lixinc

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Problanco Electronics

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Assy Fe

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Overview

Elevate your projects with the MMBD353LT1G by Onsemi, a top-tier manufacturer of high-quality Microwave Mixer & Detector Diodes. Designed for ultra-high frequency applications, this series-connected diode boasts a compact and durable package body material, making it ideal for surface mount installations. With a maximum diode capacitance of 1pF and a maximum operating temperature of 150°C, this versatile component offers exceptional performance and reliability. Whether you're working on radar systems, communication devices, or wireless equipment, the MMBD353LT1G delivers unmatched value and efficiency, ensuring seamless integration and optimal results for your engineering needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Frequency Band: ULTRA HIGH FREQUENCY

Ideal for applications requiring high-frequency signals, making it suitable for advanced communication systems and radar technology.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving space and simplifying the assembly process.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal interference with high-frequency signals, resulting in accurate and reliable performance.

No. of Terminals: 3

Provides flexibility in the connection and integration of the diodes into electronic circuits, accommodating different wiring configurations.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, allowing for use in various environments without compromising performance.

Minimum Operating Temperature: -55 °C

Withstands low temperatures, ensuring functionality in cold environments and expanding the range of applications.

Maximum Power Dissipation: 0.225 W

Efficiently dissipates heat generated during operation, preventing overheating and prolonging the diodes' lifespan.

Diode Type: MIXER DIODE

Specifically designed for mixing applications in microwave circuits, ensuring optimal signal processing and transmission.

No. of Elements: 2

Contains multiple diode elements for enhanced performance and functionality, enabling complex signal manipulation and processing.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD353LT1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD353LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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