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BAR28-AZ2

STMicroelectronics

BAR28-AZ2 by STMicroelectronics

BAR28-AZ2 by STMicroelectronics is a Schottky mixer diode with 2 pF capacitance. Operating from -65 °C to 200°C, it covers very high to ultra high frequencies. With an isolated case connection, it's ideal for microwave applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,320 parts In-Stock

1+ parts

-

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2,320

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Digiode

USA . 2,233 parts In-Stock

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2,233

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Anansix

USA . 75 parts In-Stock

1+ parts

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,256 parts In-Stock

1+ parts

$0.171

100+ parts

-

1k+ parts

$0.154

10k+ parts

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1,256

$0.171

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$0.154

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MKK Technologies

India . 1,953 parts In-Stock

1+ parts

$0.322

100+ parts

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1,953

$0.322

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DigiPath Technology Company

USA . 1,953 parts In-Stock

1+ parts

$0.322

100+ parts

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1,953

$0.322

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Native Components

USA . 760 parts In-Stock

1+ parts

$10.782

100+ parts

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760

$10.782

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Northwest PG Solutions

USA . 752 parts In-Stock

1+ parts

$11.860

100+ parts

$10.674

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752

$11.860

$10.674

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Corphita

USA . 3,473 parts In-Stock

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3,473

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Parana Technologies

USA . 1,358 parts In-Stock

1+ parts

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100+ parts

$0.205

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1,358

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$0.205

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Overview

Discover the BAR28-AZ2 by STMicroelectronics, a top-of-the-line microwave mixer & detector diode that offers unparalleled quality and reliability. With a frequency band ranging from very high to ultra-high frequencies, this diode is perfect for a wide range of applications. STMicroelectronics is renowned for their cutting-edge technology and innovation, ensuring that the BAR28-AZ2 delivers superior performance and efficiency. Whether you're working in telecommunications, radar systems, or medical equipment, this diode provides exceptional value and benefits, making it the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass for the package body material provides excellent dielectric properties and stability, ensuring reliable performance of the diode.

Config: SINGLE

The single configuration simplifies the setup and operation of the microwave mixer & detector diode, making it user-friendly and easy to integrate into existing systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

With a wide frequency band range, this diode is versatile and can be used in various applications requiring very high frequency to ultra high frequency signals.

Maximum Diode Capacitance: 2 pF

The low diode capacitance of 2 pF ensures minimal signal loss and distortion, making it ideal for high-frequency applications that require precise signal detection and mixing.

Package Shape: ROUND

The round package shape provides good mechanical strength and compactness, making it suitable for applications where space is limited.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and integration of the diode into circuits, reducing complexity and potential points of failure.

Package Style (Meter): LONG FORM

The long form package style provides good heat dissipation and thermal stability, ensuring the diode operates efficiently even at high temperatures.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows the diode to be used in a wide range of environments without compromising its performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C ensures the diode can operate even in harsh, cold conditions without any issues.

Terminal Position: AXIAL

The axial terminal position makes it easy to connect the diode to circuits and ensures a stable and secure connection for reliable signal processing.

Case Connection: ISOLATED

The isolated case connection helps prevent signal interference and improves signal purity, making the diode suitable for sensitive signal processing applications.

Diode Type: MIXER DIODE

As a mixer diode, this product is specifically designed for mixing signals in microwave applications, providing accurate and efficient signal processing capabilities.

Technology: SCHOTTKY

The Schottky technology used in this diode offers low forward voltage drop and fast switching speed, making it ideal for high-frequency applications requiring rapid signal processing.

Terminal Form: WIRE

The wire terminal form provides flexibility in connecting the diode to circuits and enables easy replacement or maintenance if needed.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high reliability, stability, and performance, making it a durable and long-lasting component for various applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAR28-AZ2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR28-AZ2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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