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1N6263-AZ1

STMicroelectronics

1N6263-AZ1 by STMicroelectronics

1N6263-AZ1 by STMicroelectronics is a Schottky mixer diode with 2.2 pF capacitance, operating from -65 to 200 °C in very high to ultra high frequency bands. It has an isolated case connection and axial terminal position, making it ideal for microwave applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,964 parts In-Stock

1+ parts

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100+ parts

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4,964

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Digiode

USA . 4,752 parts In-Stock

1+ parts

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4,752

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Anansix

USA . 129 parts In-Stock

1+ parts

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129

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,894 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

1,894

$0.062

-

$0.055

-

MKK Technologies

India . 1,770 parts In-Stock

1+ parts

$0.116

100+ parts

-

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1,770

$0.116

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DigiPath Technology Company

USA . 1,770 parts In-Stock

1+ parts

$0.116

100+ parts

-

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1,770

$0.116

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Native Components

USA . 462 parts In-Stock

1+ parts

$0.142

100+ parts

-

1k+ parts

-

10k+ parts

$0.137

462

$0.142

-

-

$0.137

Northwest PG Solutions

USA . 225 parts In-Stock

1+ parts

$0.157

100+ parts

-

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-

10k+ parts

$0.138

225

$0.157

-

-

$0.138

Parana Technologies

USA . 1,095 parts In-Stock

1+ parts

-

100+ parts

$0.074

1k+ parts

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1,095

-

$0.074

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Corphita

USA . 732 parts In-Stock

1+ parts

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732

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Overview

Discover the unparalleled performance and reliability of the 1N6263-AZ1 by STMicroelectronics, a top-tier manufacturer in the industry. As part of the Microwave Mixer & Detector Diodes category, this product is designed to provide exceptional functionality across a wide range of applications, from very high frequency to ultra high frequency. With a focus on quality and precision, STMicroelectronics ensures that this diode offers unmatched value, benefits, and advantages to customers seeking superior performance and efficiency in their electronic systems. Elevate your projects with the cutting-edge technology and innovation of the 1N6263-AZ1.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material helps in providing excellent heat resistance and durability to the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band range makes this product suitable for a variety of high frequency applications, ensuring versatility.

Maximum Diode Capacitance: 2.2 pF

The low maximum diode capacitance allows for efficient signal processing and high frequency operation.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and makes the product easy to integrate into different systems.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for mixing high-frequency signals, ensuring accurate and reliable signal processing.

Technology: SCHOTTKY

The Schottky technology used in this product provides fast switching speed and low forward voltage drop, enhancing overall performance.

Diode Element Material: SILICON

Silicon diode elements offer high temperature stability, low noise, and fast response times, making them ideal for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes 1N6263-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

1N6263-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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