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SMMBD770T1G

Onsemi

SMMBD770T1G by Onsemi

The Onsemi SMMBD770T1G is a Schottky mixer diode with a max forward voltage of 0.5V and output current of 0.2A. It operates at up to 125°C, making it suitable for microwave applications requiring high-speed signal detection and mixing in surface-mount configurations.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 21,000 parts In-Stock

1+ parts

$0.018

100+ parts

-

1k+ parts

-

10k+ parts

$0.012

21,000

$0.018

-

-

$0.012

Mouser Electronics

USA . 9,030 parts In-Stock

1+ parts

$0.100

100+ parts

$0.027

1k+ parts

$0.024

10k+ parts

$0.020

9,030

$0.100

$0.027

$0.024

$0.020

DigiKey

USA . 6,625 parts In-Stock

1+ parts

$0.100

100+ parts

$0.030

1k+ parts

$0.024

10k+ parts

$0.021

6,625

$0.100

$0.030

$0.024

$0.021

Newark

USA . 318 parts In-Stock

1+ parts

$0.108

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

-

318

$0.108

$0.037

$0.031

-

Rochester

USA . 221,000 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.019

10k+ parts

$0.017

221,000

-

$0.024

$0.019

$0.017

Verical

USA . 92,000 parts In-Stock

1+ parts

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92,000

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Flip Electronics (Authorized)

USA . 75,000 parts In-Stock

1+ parts

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75,000

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Farnell

UK . 316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.021

10k+ parts

$0.018

316

-

-

$0.021

$0.018

Element14

Singapore . 316 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.032

10k+ parts

$0.030

316

-

$0.040

$0.032

$0.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,365 parts In-Stock

1+ parts

$0.024

100+ parts

-

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2,365

$0.024

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Vyrian

USA . 190 parts In-Stock

1+ parts

$0.025

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190

$0.025

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Flip Electronics

USA . 75,000 parts In-Stock

1+ parts

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75,000

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-

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IBS Electronics

USA . 21,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.028

21,000

-

-

-

$0.028

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.088

18,000

-

-

-

$0.088

Cyclops Electronics Ltd

UK . 2,897 parts In-Stock

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2,897

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,353 parts In-Stock

1+ parts

$0.022

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1,353

$0.022

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Corohmni

South Africa . 59 parts In-Stock

1+ parts

$0.025

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59

$0.025

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-

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RC Electronics

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.130

10k+ parts

$0.120

18,000

-

$0.130

$0.130

$0.120

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 8,363 parts In-Stock

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8,363

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Problanco Electronics

Mexico . 8,177 parts In-Stock

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8,177

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SupplyDigital Components

Austria . 2,380 parts In-Stock

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2,380

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Continental Prestige Electronics

USA . 2,349 parts In-Stock

1+ parts

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$0.147

1k+ parts

$0.094

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2,349

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$0.147

$0.094

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Kulean Microsystems

USA . 202 parts In-Stock

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202

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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200

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Overview

Unlock the power of cutting-edge technology with the SMMBD770T1G by Onsemi. As a leading manufacturer in the industry, Onsemi is committed to providing top-quality components for a wide range of applications. The SMMBD770T1G belongs to the Microwave Mixer & Detector Diodes category, offering unparalleled performance and reliability. With surface mount configuration and a maximum operating temperature of 125°C, this diode is designed to meet the demands of today's fast-paced world. Trust Onsemi to deliver value, benefits, and advantages that will elevate your projects to new heights.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the setup and reduces the complexity of the system.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes the risk of damage to the diode during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables robust soldering processes.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode for signal processing applications.

Maximum Forward Voltage (VF): 0.5 V

Low forward voltage results in minimal power loss and efficient operation.

Maximum Output Current: 0.2 A

Capable of handling moderate output currents for various applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low voltage drop for improved performance.

Maximum Repetitive Peak Reverse Voltage: 70 V

A high reverse voltage rating provides protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 1 A

Can handle short-term peak currents without damage, ensuring durability.

Diode Element Material: SILICON

Silicon diode element material offers stability and reliability in various operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes SMMBD770T1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMMBD770T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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