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SMMBD701LT1

Onsemi

SMMBD701LT1 by Onsemi

SMMBD701LT1 by Onsemi is a single Schottky mixer diode with 1 pF capacitance. It operates in the ultra high frequency band and has a max power dissipation of 0.2 W. This small outline package diode is ideal for microwave applications requiring surface mount technology.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 161,625 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

161,625

-

$0.119

$0.099

$0.088

DigiKey

USA . 161,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

161,625

-

-

-

$0.150

Verical

USA . 161,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

161,625

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,422 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

1,422

$0.078

-

-

-

Digiode

USA . 1,876 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,876

$0.093

-

-

-

DigiKey Marketplace

USA . 167,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

167,875

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 229 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

229

$0.078

-

-

-

Corphita

USA . 787 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

787

$0.088

-

-

-

Continental Prestige Electronics

USA . 167,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.078

10k+ parts

-

167,875

-

-

$0.078

-

Kulean Microsystems

USA . 6,320 parts In-Stock

1+ parts

-

100+ parts

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6,320

-

-

-

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Problanco Electronics

Mexico . 5,874 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,874

-

-

-

-

SupplyDigital Components

Austria . 2,878 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,878

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-

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-

TANS Electronics

Latvia . 1,370 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,370

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-

-

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UHIMA Technologies

Türkiye . 850 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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850

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-

-

-

Overview

Experience unparalleled performance with the SMMBD701LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi's Microwave Mixer & Detector Diodes are known for their superior quality and reliability. Ideal for ultra-high frequency applications, this product offers customers unmatched value and benefits. Whether you're looking for precise signal detection or efficient mixing capabilities, the SMMBD701LT1 delivers exceptional results. Upgrade your electronics with Onsemi today and discover the advantages of cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Frequency Band: ULTRA HIGH FREQUENCY

Allows for high-speed data transmission and processing, making it suitable for advanced communication systems.

Surface Mount: YES

Allows for easy, compact, and efficient integration onto circuit boards, saving space and simplifying assembly.

Maximum Diode Capacitance: 1 pF

Ensures minimal signal loss and distortion, leading to high performance and accuracy in signal processing.

Maximum Power Dissipation: 0.2 W

Handles power efficiently, preventing overheating and damage to the components, ensuring reliable operation.

Diode Type: MIXER DIODE

Specifically designed for mixing and detecting signals, providing precise and reliable signal processing capabilities.

Technology: SCHOTTKY

Offers high switching speeds and low forward voltage drop, enabling fast and efficient signal processing in high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes SMMBD701LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMMBD701LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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