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SMMBD330T1G

Onsemi

SMMBD330T1G by Onsemi

SMMBD330T1G by Onsemi is a Schottky mixer diode with a max forward voltage of 0.45V and max output current of 0.2A. It operates at temperatures up to 125 °C, making it suitable for microwave applications requiring high-speed signal detection and mixing capabilities.

Median Price

$0.190

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,990 parts In-Stock

1+ parts

$0.260

100+ parts

$0.124

1k+ parts

$0.112

10k+ parts

$0.100

2,990

$0.260

$0.124

$0.112

$0.100

DigiKey

USA . 1,871 parts In-Stock

1+ parts

$0.260

100+ parts

$0.134

1k+ parts

$0.112

10k+ parts

-

1,871

$0.260

$0.134

$0.112

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Rochester

USA . 228,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

228,000

-

$0.119

$0.099

$0.088

Verical

USA . 228,000 parts In-Stock

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-

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$0.110

228,000

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-

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$0.110

Distributors (In-Stock)

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Digiode

USA . 1,185 parts In-Stock

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$0.092

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-

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1,185

$0.092

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Vyrian

USA . 2,016 parts In-Stock

1+ parts

$0.097

100+ parts

-

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2,016

$0.097

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Chip Stock

USA . 50,000 parts In-Stock

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50,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,789 parts In-Stock

1+ parts

$0.087

100+ parts

-

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1,789

$0.087

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Corohmni

South Africa . 393 parts In-Stock

1+ parts

$0.097

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-

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393

$0.097

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Component Stockers USA

USA . 252,904 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

252,904

$0.100

$0.090

$0.080

$0.080

Ampacity Inc.

Singapore . 115,141 parts In-Stock

1+ parts

$0.179

100+ parts

-

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115,141

$0.179

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Problanco Electronics

Mexico . 8,333 parts In-Stock

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8,333

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Kulean Microsystems

USA . 7,784 parts In-Stock

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7,784

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iodParts Technologies Inc.

India . 6,917 parts In-Stock

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6,917

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SupplyDigital Components

Austria . 6,125 parts In-Stock

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6,125

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UHIMA Technologies

Türkiye . 120 parts In-Stock

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120

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TANS Electronics

Latvia . 70 parts In-Stock

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70

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Overview

Upgrade your microwave mixer and detector diodes with the SMMBD330T1G from Onsemi. With a reputation for quality and reliability, Onsemi delivers top-notch components that are perfect for a wide range of applications. Whether you're working on telecommunications, radar systems, or satellite communications, this single-config surface mount diode offers unmatched performance. Experience the benefits of low forward voltage, high output current, and Schottky technology that ensure optimal functionality. Trust Onsemi to provide the value and advantage you need for your next project.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy integration and straightforward operation.

Surface Mount: YES

Surface mount capability enables efficient and space-saving installation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability even in demanding conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time allows for quick and efficient manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper bonding of components during assembly.

Diode Type: MIXER DIODE

Mixer diode type is ideal for signal mixing and detection applications.

Maximum Forward Voltage (VF): 0.45 V

Low forward voltage results in minimal power loss and efficient operation.

Maximum Output Current: 0.2 A

High output current allows for handling of larger signal loads.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low reverse leakage current.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage rating provides robust protection against reverse polarity.

Maximum Non Repetitive Peak Forward Current: 1 A

High non-repetitive peak forward current allows for handling of transient overloads.

Diode Element Material: SILICON

Silicon diode element material offers good performance and reliability.

Technical Specifications

Microwave Mixer & Detector Diodes SMMBD330T1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMMBD330T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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