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BAR28-B2

STMicroelectronics

BAR28-B2 by STMicroelectronics

BAR28-B2 by STMicroelectronics is a single Schottky mixer diode with a max operating temperature of 200 °C and frequency band from VHF to UHF. With a diode capacitance of 2 pF, it is ideal for applications requiring very high frequency signal mixing in microwave circuits. The package shape is round with an isolated case connection, making it suitable for use in various RF and microwave systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ECAB

Sweden . 26,967 parts In-Stock

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26,967

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Digiode

USA . 2,180 parts In-Stock

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2,180

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Anansix

USA . 1,333 parts In-Stock

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1,333

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Vyrian

USA . 474 parts In-Stock

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474

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,541 parts In-Stock

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$0.026

100+ parts

-

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$0.023

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1,541

$0.026

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$0.023

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MKK Technologies

India . 158 parts In-Stock

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$0.048

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158

$0.048

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DigiPath Technology Company

USA . 158 parts In-Stock

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$0.048

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158

$0.048

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Corphita

USA . 3,834 parts In-Stock

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3,834

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Parana Technologies

USA . 2,244 parts In-Stock

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$0.031

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2,244

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$0.031

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Northwest PG Solutions

USA . 753 parts In-Stock

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753

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Native Components

USA . 460 parts In-Stock

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460

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Overview

Elevate your RF design with the BAR28-B2 from STMicroelectronics. Crafted with precision and expertise, this microwave mixer & detector diode offers exceptional performance in very high frequency to ultra-high frequency applications. The glass package body material ensures durability, while the Schottky technology guarantees reliable operation. With a maximum diode capacitance of 2 pF and a wide temperature range, this product is a versatile solution for various industrial and commercial projects. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good insulation and durability, ensuring reliable performance and protection for the diode.

Config: SINGLE

Single configuration simplifies the setup and operation of the diode, making it easier to integrate into various systems.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band allows for versatile use in applications that require high-frequency signals.

Maximum Diode Capacitance: 2 pF

Low diode capacitance ensures minimal signal loss and distortion, enabling precise and efficient signal processing.

Package Shape: ROUND

Round shape provides compact and efficient packaging, saving space and facilitating easy installation.

No. of Terminals: 2

Two terminals simplify the wiring and connectivity of the diode, improving overall system efficiency.

Package Style (Meter): LONG FORM

Long form package style offers a stable and secure housing for the diode, enhancing its performance and longevity.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the diode to perform reliably in a wide range of environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function effectively even in harsh cold conditions.

Terminal Position: AXIAL

Axial terminal position simplifies the installation and connection process, reducing the chances of errors or malfunctions.

Case Connection: ISOLATED

Isolated case connection provides enhanced safety and protection against electrical interference, ensuring stable performance.

Diode Type: MIXER DIODE

Mixer diode type offers efficient signal mixing capabilities, making the product suitable for various signal processing applications.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speed, improving overall efficiency and performance.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connection, ensuring stable signal transmission and minimal signal loss.

Diode Element Material: SILICON

Silicon material offers good conductivity and temperature stability, making the diode reliable and durable for long-term use.

Technical Specifications

Microwave Mixer & Detector Diodes BAR28-B2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR28-B2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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