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1N6263-AR1

STMicroelectronics

1N6263-AR1 by STMicroelectronics

1N6263-AR1 by STMicroelectronics is a Schottky mixer diode with 2.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications due to its isolated axial package and silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,337 parts In-Stock

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Anansix

USA . 1,046 parts In-Stock

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Digiode

USA . 879 parts In-Stock

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IDEA Electronic Components Group

UK . 697 parts In-Stock

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$0.022

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MKK Technologies

India . 1,258 parts In-Stock

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$0.045

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DigiPath Technology Company

USA . 1,258 parts In-Stock

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Corphita

USA . 3,560 parts In-Stock

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Northwest PG Solutions

USA . 1,467 parts In-Stock

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Parana Technologies

USA . 1,265 parts In-Stock

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Native Components

USA . 176 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of STMicroelectronics with the 1N6263-AR1 Microwave Mixer & Detector Diode. This single-configured diode, made with high-grade silicon material, is designed for very high frequency to ultra high frequency applications. Its Schottky technology ensures optimal performance while its round package shape and isolated case connection offer ease of integration. Trust in STMicroelectronics to deliver cutting-edge technology that exceeds your expectations, providing you with unmatched value and benefits in your projects.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body material provides durability and protection for the diode, making it suitable for a variety of environments and applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band allows for versatile use in high-frequency applications and ensures compatibility with various signal frequencies.

Maximum Diode Capacitance: 2.2 pF

The low maximum diode capacitance ensures minimal signal loss and efficient performance, making it ideal for high frequency mixing and detection.

Package Shape: ROUND

The round package shape provides ease of installation and integration into existing systems, offering a compact and space-saving design.

No. of Terminals: 2

The two terminals simplify the connection process and enhance the overall stability of the diode, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this diode can withstand extreme heat conditions, ensuring optimal performance in various temperature environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the diode to function effectively in cold conditions, making it suitable for a wide range of temperature settings.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for mixing and detection applications, providing high sensitivity and accuracy in signal processing.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speed, resulting in improved efficiency and performance in high-frequency operations.

Diode Element Material: SILICON

Silicon diode element material ensures reliable and stable performance, making it a preferred choice for various high-frequency applications requiring precision and consistency.

Technical Specifications

Microwave Mixer & Detector Diodes 1N6263-AR1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

1N6263-AR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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