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1N5712-B2

STMicroelectronics

1N5712-B2 by STMicroelectronics

1N5712-B2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications due to its isolated case connection and 0.43 W power dissipation capability in a glass package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,831 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,831

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-

-

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Vyrian

USA . 1,167 parts In-Stock

1+ parts

-

100+ parts

-

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1,167

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Anansix

USA . 934 parts In-Stock

1+ parts

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934

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 92 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

$0.086

10k+ parts

-

92

$0.096

-

$0.086

-

MKK Technologies

India . 1,155 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

-

10k+ parts

-

1,155

$0.180

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DigiPath Technology Company

USA . 1,155 parts In-Stock

1+ parts

$0.180

100+ parts

-

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-

10k+ parts

-

1,155

$0.180

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-

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Native Components

USA . 394 parts In-Stock

1+ parts

$8,183.500

100+ parts

$8,019.830

1k+ parts

$7,937.995

10k+ parts

$7,856.160

394

$8,183.500

$8,019.830

$7,937.995

$7,856.160

Northwest PG Solutions

USA . 2,005 parts In-Stock

1+ parts

$9,001.850

100+ parts

-

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-

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2,005

$9,001.850

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Corphita

USA . 1,443 parts In-Stock

1+ parts

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1,443

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Parana Technologies

USA . 1,042 parts In-Stock

1+ parts

-

100+ parts

$0.114

1k+ parts

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10k+ parts

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1,042

-

$0.114

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Overview

Experience the next level of performance with the 1N5712-B2 by STMicroelectronics. Crafted with precision and expertise, this microwave mixer & detector diode offers unparalleled quality and reliability. From very high frequency to ultra high frequency applications, this diode delivers exceptional results. With a maximum power dissipation of 0.43W and a Schottky technology, this product ensures optimal functionality in a variety of environments. Trust STMicroelectronics to provide you with the cutting-edge solutions you need for your projects. Elevate your designs with the 1N5712-B2 and experience the difference today.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material enhances the durability and reliability of the product, providing better protection for the diode inside.

Config: SINGLE

Single configuration simplifies the setup and operation of the product, making it user-friendly.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band ensures versatility and compatibility with a range of applications that operate at different frequencies.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance ensures high-speed performance and efficient signal processing.

Package Shape: ROUND

Round shape promotes ease of installation and integration into various electronic systems.

No. of Terminals: 2

Having 2 terminals simplifies the connections and reduces complexity in the setup process.

Package Style (Meter): LONG FORM

Long form package style provides a compact and space-saving design for efficient utilization of board space.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures reliable performance even in elevated temperature environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the product to function effectively in cold environments as well.

Terminal Position: AXIAL

Axial terminal position offers easy access for connections and facilitates installation in electronic circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing unwanted interference and ensures stable performance.

Maximum Power Dissipation: 0.43 W

High maximum power dissipation capability allows the product to handle high power levels without overheating.

Diode Type: MIXER DIODE

Mixer diode type is suitable for mixing and detecting microwave signals, making it ideal for RF applications.

Technology: SCHOTTKY

Schottky technology offers high-frequency performance, low noise operation, and fast switching speeds for efficient signal processing.

Terminal Form: WIRE

Wire terminal form provides secure connections and ease of soldering during installation.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, stability, and compatibility for various electronic applications.

Technical Specifications

Microwave Mixer & Detector Diodes 1N5712-B2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.43 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

1N5712-B2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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