Loading...

BAT45

STMicroelectronics

BAT45 by STMicroelectronics

BAT45 by STMicroelectronics is a Schottky mixer diode designed for ultra-high frequency applications. It features a max reverse current of 0.1 µA, capacitance of 1.1 pF, and operates b/w -65 °C to 125°C. Ideal for microwave mixers and detectors in communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SPM Sales

USA . 2,710 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,710

-

-

-

-

ECAB

Sweden . 2,683 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,683

-

-

-

-

Digiode

USA . 2,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,435

-

-

-

-

Anansix

USA . 1,413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,413

-

-

-

-

Vyrian

USA . 496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

496

-

-

-

-

LittleDiode

UK . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,010 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

$0.085

10k+ parts

-

1,010

$0.095

-

$0.085

-

MKK Technologies

India . 479 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

-

479

$0.178

-

-

-

DigiPath Technology Company

USA . 479 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

-

479

$0.178

-

-

-

Native Components

USA . 139 parts In-Stock

1+ parts

$132.360

100+ parts

-

1k+ parts

-

10k+ parts

$127.066

139

$132.360

-

-

$127.066

Northwest PG Solutions

USA . 1,214 parts In-Stock

1+ parts

$145.596

100+ parts

-

1k+ parts

-

10k+ parts

-

1,214

$145.596

-

-

-

Alle Elektronik GmbH

Germany . 4,348 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,348

-

-

-

-

Corphita

USA . 1,820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,820

-

-

-

-

Authorized Procurement Solutions

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Parana Technologies

USA . 341 parts In-Stock

1+ parts

-

100+ parts

$0.113

1k+ parts

-

10k+ parts

-

341

-

$0.113

-

-

Assy Fe

Spain . 75 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

75

-

-

-

-

Overview

Unlock unparalleled performance with the BAT45 by STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality microwave mixer and detector diode is designed for ultra-high frequency applications, delivering exceptional reliability and efficiency. Its robust construction ensures durability across extreme temperatures, making it ideal for demanding environments. Experience superior signal clarity and minimized noise, empowering your projects with unmatched precision and performance. Choose the BAT45 for cutting-edge technology that elevates your designs!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package provides excellent thermal stability and resistance to environmental factors, ensuring reliable performance.

Config: SINGLE

The single configuration simplifies integration into circuits while ensuring efficient operation as a mixer diode.

Frequency Band: ULTRA HIGH FREQUENCY

Optimized for ultra high frequency operations, this diode is ideal for applications such as RF and microwave systems.

Maximum Diode Capacitance: 1.1 pF

Low capacitance enables high-speed performance and minimizes signal distortion, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 0.1 uA

This extremely low reverse current ensures minimal leakage, contributing to efficient operation and power savings.

Package Shape: ROUND

The round shape of the package aids in effective heat dissipation and allows for easier mounting in various circuit designs.

No. of Terminals: 2

The two-terminal design simplifies connections and integration into a variety of circuits.

Package Style (Meter): LONG FORM

The long form package style enhances flexibility in design and layout, making it adaptable to various applications.

Maximum Operating Temperature: 125 °C

Able to withstand high operating temperatures, this diode is durable and reliable even in demanding environments.

Minimum Operating Temperature: -65 °C

This capability to perform in extremely low temperatures makes the diode suitable for aerospace and military applications.

Terminal Position: AXIAL

Axial terminal positioning allows for straightforward integration and enhances stability during soldering.

Case Connection: ISOLATED

Isolated case connections ensure safety by preventing unintended electrical contact and contribute to overall circuit integrity.

Minimum Breakdown Voltage: 15 V

A higher breakdown voltage ensures that the diode can endure and function effectively in high-voltage applications.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode, it excels at frequency conversion applications, improving signal processing capabilities.

Maximum Forward Voltage (VF): 1 V

Low forward voltage ensures efficient operation and less power loss, making the diode energy efficient.

Maximum Output Current: 30 A

The capability to handle high output currents supports robust applications and enhances power-handling capacity.

Technology: SCHOTTKY

Utilizing Schottky technology provides faster switching speeds and lower forward voltage drop, increasing overall efficiency.

Terminal Form: WIRE

Wire terminals provide flexibility in mounting options and can facilitate easy connections in various applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

This rating indicates robustness against voltage spikes, ensuring reliability in harsh operational conditions.

Maximum Noise Figure: 7 dB

A low noise figure makes this diode suitable for sensitive applications where signal integrity is crucial.

Maximum Non Repetitive Peak Forward Current: 0.06 A

This characteristic supports momentary surges in current, allowing for greater design flexibility in circuit applications.

Diode Element Material: SILICON

Silicon as the diode element material offers high performance and durability, making it ideal for a wide range of electronic applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAT45 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Minimum Breakdown Voltage:

15 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-GALF-W2

Maximum Noise Figure:

7 dB

Maximum Non Repetitive Peak Forward Current:

.06 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

.1 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT45 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-14-428-1686, 5961144281686

NIIN

144281686

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7