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BAT45-B2

STMicroelectronics

BAT45-B2 by STMicroelectronics

BAT45-B2 by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current, ideal for ultra high frequency applications. With a max forward voltage of 1V and output current of 30A, it operates at temperatures up to 125 °C in an isolated round glass package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,978 parts In-Stock

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1,978

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Vyrian

USA . 932 parts In-Stock

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932

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Anansix

USA . 893 parts In-Stock

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893

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 848 parts In-Stock

1+ parts

$0.057

100+ parts

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$0.051

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848

$0.057

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$0.051

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MKK Technologies

India . 2,168 parts In-Stock

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$0.107

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$0.107

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DigiPath Technology Company

USA . 2,168 parts In-Stock

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$0.107

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2,168

$0.107

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Native Components

USA . 525 parts In-Stock

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$0.138

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$0.132

525

$0.138

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$0.132

Northwest PG Solutions

USA . 262 parts In-Stock

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$0.151

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$0.133

262

$0.151

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$0.133

Parana Technologies

USA . 2,345 parts In-Stock

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$0.068

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2,345

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$0.068

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Corphita

USA . 1,833 parts In-Stock

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1,833

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Overview

Elevate your electronic designs with the cutting-edge BAT45-B2 by STMicroelectronics. As a leader in the industry, STMicroelectronics delivers unmatched quality and reliability. This microwave mixer and detector diode is perfect for ultra-high frequency applications, offering low noise figure and excellent performance. With its Schottky technology and high breakdown voltage, the BAT45-B2 ensures optimal efficiency and precision in your projects. Trust STMicroelectronics to provide you with the best-in-class components for your next innovation.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package body material provides durability and helps to protect the diode from external elements, ensuring long-term reliability.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, providing high performance and accuracy in signal processing.

Maximum Diode Capacitance: 1.1 pF

Low diode capacitance ensures minimal signal loss and distortion, making this diode ideal for high frequency applications.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures efficient operation and minimal power consumption.

Package Shape: ROUND

Round package shape allows for easy integration into various circuit designs, making it versatile and practical.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop, making it suitable for high frequency mixing and detection applications.

Maximum Noise Figure: 7 dB

Low noise figure ensures clean and accurate signal processing, making this diode suitable for sensitive receiver applications.

Diode Element Material: SILICON

Silicon diode element material offers high thermal stability and reliability, ensuring consistent performance over a wide range of operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes BAT45-B2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Minimum Breakdown Voltage:

15 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

Maximum Noise Figure:

7 dB

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.1 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT45-B2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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