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MMDL301T1G

Onsemi

MMDL301T1G by Onsemi

MMDL301T1G by Onsemi is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.45V. This small outline diode has a max power dissipation of 0.2W and is suitable for applications requiring high-frequency signal mixing and detection.

Median Price

$0.029

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Future Electronics

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Arrow

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Element14

Singapore . 12,000 parts In-Stock

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Newark

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Chip1Stop

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Digiode

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Singapore . 29,687 parts In-Stock

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Corphita

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South Africa . 353 parts In-Stock

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Argo Parts USA

USA . 993 parts In-Stock

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CPlus Electronics

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Netroflash

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Latvia . 565 parts In-Stock

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Overview

Unlock the power of very high frequency to ultra high frequency applications with the MMDL301T1G by Onsemi. This microwave mixer & detector diode, crafted with precision and expertise by Onsemi, offers unmatched quality and reliability. With a small outline package style and dual terminal position, this diode is perfect for a wide range of surface mount applications. Experience the benefits of superior performance and efficiency with the MMDL301T1G, delivering value and advantages that will elevate your projects to new heights. Trust Onsemi to provide the best-in-class components for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides excellent protection for the internal components of the diode, ensuring a long lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band allows for versatile use in various high-frequency applications, making it a versatile choice for different projects.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance ensures minimal signal loss and distortion, making this diode ideal for high-frequency mixing and detecting applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and ensures a reliable electrical connection, making installation and maintenance easy.

Maximum Power Dissipation: 0.2 W

With a high maximum power dissipation, this diode can handle high-power applications without overheating, ensuring stable performance under demanding conditions.

Diode Type: MIXER DIODE

As a mixer diode, this product is designed for high-frequency signal mixing and detection applications, making it a perfect choice for RF and microwave circuits.

Technical Specifications

Microwave Mixer & Detector Diodes MMDL301T1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMDL301T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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