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MMDL770T1G

Onsemi

MMDL770T1G by Onsemi

MMDL770T1G by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V. Ideal for applications requiring small outline surface mount diodes, such as RF mixers and detectors.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 26 parts In-Stock

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$0.019

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$0.019

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Mouser Electronics

USA . 2,906 parts In-Stock

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$0.100

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$0.035

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$0.031

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$0.027

2,906

$0.100

$0.035

$0.031

$0.027

DigiKey

USA . 666 parts In-Stock

1+ parts

$0.100

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$0.038

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$0.030

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666

$0.100

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Newark

USA . 5,789 parts In-Stock

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$0.110

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$0.050

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$0.049

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$0.110

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Flip Electronics (Authorized)

USA . 1,059,000 parts In-Stock

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Future Electronics

Canada . 312,000 parts In-Stock

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$0.034

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Rochester

USA . 52,520 parts In-Stock

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$0.030

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$0.025

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52,520

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$0.030

$0.025

$0.022

Element14

Singapore . 10,632 parts In-Stock

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$0.071

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Chip1Stop

Japan . 2,690 parts In-Stock

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2,690

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Verical

USA . 1,124 parts In-Stock

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$0.036

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$0.029

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$0.026

1,124

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$0.026

Distributors (In-Stock)

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Digiode

USA . 418 parts In-Stock

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$0.024

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Nova Conductors

Japan . 300 parts In-Stock

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$0.065

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TME

Poland . 900 parts In-Stock

1+ parts

$0.090

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$0.059

1k+ parts

$0.043

10k+ parts

$0.036

900

$0.090

$0.059

$0.043

$0.036

IBS Electronics

USA . 2,637,163 parts In-Stock

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$0.309

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$0.051

2,637,163

$0.309

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$0.051

NAC Semi

USA . 3,228,000 parts In-Stock

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$0.070

3,228,000

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$0.070

Flip Electronics

USA . 674,000 parts In-Stock

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Chip Stock

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Vyrian

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North Shore Components

USA . 6,344 parts In-Stock

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Semi Source

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PC Components Company LLC

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Bristol Electronics

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,924 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,924 parts In-Stock

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Beltway Electronics Company

USA . 2,872 parts In-Stock

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First Choice Components Inc.

USA . 2,739 parts In-Stock

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Sensible Micro Corp

USA . 2,678 parts In-Stock

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Semtec, LLC

USA . 2,300 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,989 parts In-Stock

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Prism Electronics

USA . 1,803 parts In-Stock

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USA . 530 parts In-Stock

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530

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Ampacity Inc.

Singapore . 103,742 parts In-Stock

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$0.018

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Corohmni

South Africa . 483 parts In-Stock

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Corphita

USA . 2,112 parts In-Stock

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Component Stockers USA

USA . 19 parts In-Stock

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$0.060

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$0.040

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19

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Perfect Parts

USA . 2,580,293 parts In-Stock

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Epart123

USA . 210,000 parts In-Stock

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RC Electronics

USA . 146,196 parts In-Stock

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Futuretech Components

Singapore . 90,000 parts In-Stock

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Eastek

USA . 12,000 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Lixinc

USA . 5,118 parts In-Stock

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Continental Prestige Electronics

USA . 4,790 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,867 parts In-Stock

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Problanco Electronics

Mexico . 1,922 parts In-Stock

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TANS Electronics

Latvia . 940 parts In-Stock

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Kulean Microsystems

USA . 692 parts In-Stock

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UHIMA Technologies

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Netroflash

USA . 50 parts In-Stock

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Overview

Discover the superior performance and reliability of the MMDL770T1G by Onsemi. Manufactured by a trusted industry leader, this microwave mixer & detector diode offers exceptional quality and precision. Perfect for applications in very high frequency to ultra high frequency bands, this diode provides unmatched sensitivity and accuracy. With its compact design and advanced technology, customers can rely on the MMDL770T1G to deliver consistent results in a wide range of electronic devices. Experience the value and benefits of this innovative product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, suitable for various applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band range ensures that the product can be used in a variety of high-frequency applications, providing versatility.

Maximum Diode Capacitance: 1 pF

Low diode capacitance of 1 pF ensures minimal signal distortion and high-frequency performance, making it suitable for sensitive applications.

No. of Terminals: 2

The product has 2 terminals, making it simple and easy to integrate into circuit designs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the product can withstand high temperatures, ensuring reliable performance in demanding environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring a reliable connection in circuit assemblies.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, the product can handle high power levels without overheating, ensuring long-term reliability.

Technical Specifications

Microwave Mixer & Detector Diodes MMDL770T1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMDL770T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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