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SGD102

Onsemi

SGD102 by Onsemi

The Onsemi SGD102 is a Schottky mixer diode with a max operating frequency of 12 GHz. It features a package body made of plastic/epoxy and has a max diode capacitance of 0.4 pF. Ideal for applications in microwave systems, it operates in the C band to X band frequencies and comes in a small outline rectangular package with gull wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,066 parts In-Stock

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Vyrian

USA . 575 parts In-Stock

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Kulean Microsystems

USA . 6,588 parts In-Stock

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Problanco Electronics

Mexico . 2,908 parts In-Stock

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TANS Electronics

Latvia . 1,730 parts In-Stock

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SupplyDigital Components

Austria . 1,384 parts In-Stock

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Corphita

USA . 934 parts In-Stock

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UHIMA Technologies

Türkiye . 471 parts In-Stock

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Corohmni

South Africa . 212 parts In-Stock

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Overview

Enhance your microwave applications with the SGD102 by Onsemi, a top-quality mixer and detector diode that offers exceptional performance in the C Band to X Band frequency range. Manufactured by Onsemi, renowned for their cutting-edge technology and innovative solutions, this diode boasts a small outline package design and dual terminal position for easy integration. With a maximum operating frequency of 12 GHz and Gallium Arsenide diode element material, the SGD102 delivers superior signal processing capabilities. Take your microwave systems to the next level with the SGD102 and experience unmatched reliability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that can withstand various environmental conditions, making the product long-lasting and reliable.

Frequency Band: C BAND TO X BAND

Wide frequency range allows for versatility in applications, suitable for a range of different frequency bands.

Surface Mount: YES

Easy to install and suitable for compact designs, making it convenient for various electronic applications.

Maximum Diode Capacitance: 0.4 pF

Low diode capacitance ensures high-speed operation and minimal signal distortion, ideal for microwave mixing and detection applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards and space-saving design, optimizing layout possibilities.

No. of Terminals: 3

Designed with the right number of terminals for proper connectivity and functionality, ensuring effective integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on circuit boards and facilitates easy installation, perfect for applications with limited space constraints.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in various temperature environments, ensuring stability and durability.

Terminal Position: DUAL

Dual terminal position provides flexibility in connection options and compatibility with different circuit configurations, enhancing usability.

Diode Type: MIXER DIODE

Specifically designed for microwave mixing applications, ensuring accurate signal processing and detection for precise measurements.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, enhancing the efficiency and performance of the diode.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and soldering, facilitating quick and secure connections for hassle-free installation.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide material provides high electron mobility and low noise characteristics, ensuring high performance and sensitivity in microwave applications.

Maximum Operating Frequency: 12 GHz

High maximum operating frequency enables high-speed signal processing and detection for a wide range of microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes SGD102 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Frequency Band:

C BAND TO X BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Frequency:

12 GHz

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SGD102 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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