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TMM5711

STMicroelectronics

TMM5711 by STMicroelectronics

TMM5711 by STMicroelectronics is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max power dissipation of 0.43W. Ideal for applications requiring high-frequency signal mixing and detection in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,977

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-

-

-

Vyrian

USA . 2,578 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,578

-

-

-

-

Anansix

USA . 2,376 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,376

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,372 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

$0.052

10k+ parts

-

2,372

$0.058

-

$0.052

-

MKK Technologies

India . 1,968 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

-

1,968

$0.109

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-

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DigiPath Technology Company

USA . 1,968 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

-

1,968

$0.109

-

-

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Corphita

USA . 1,490 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,490

-

-

-

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Parana Technologies

USA . 196 parts In-Stock

1+ parts

-

100+ parts

$0.069

1k+ parts

-

10k+ parts

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196

-

$0.069

-

-

Overview

Elevate your RF design with the TMM5711 from STMicroelectronics, a leading manufacturer known for quality and reliability. This microwave mixer & detector diode offers very high frequency to ultra high frequency capabilities in a compact single package. With its low diode capacitance and advanced Schottky technology, this product provides superior performance for a wide range of applications. Experience the value and benefits of the TMM5711, where precision meets innovation for your next project.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package body material provides good thermal and electrical insulation, ensuring better performance and reliability of the diode.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covers a wide frequency range, making it suitable for various applications requiring high frequency operation.

Maximum Diode Capacitance: 2 pF

Low diode capacitance ensures fast switching speed and low signal distortion in high frequency applications.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures, making it suitable for demanding industrial or military applications.

Maximum Power Dissipation: 0.43 W

Has a high power dissipation capability, allowing it to handle high power levels without damage.

Diode Type: MIXER DIODE

Designed specifically for mixing applications in RF circuits, providing reliable performance in signal processing.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching speed, ideal for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes TMM5711 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.015 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.43 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

TMM5711 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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