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MMSD301T1

Onsemi

MMSD301T1 by Onsemi

MMSD301T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 0.6V and repetitive peak reverse voltage of 30V. It operates in very high to ultra high frequency bands, has a small outline package style, and can handle temperatures up to 125 °C. Ideal for microwave applications requiring surface mount technology.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 59,500 parts In-Stock

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-

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$0.238

1k+ parts

$0.197

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$0.176

59,500

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$0.238

$0.197

$0.176

DigiKey

USA . 59,500 parts In-Stock

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$0.300

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$0.300

Verical

USA . 59,500 parts In-Stock

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$0.220

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$0.220

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Digiode

USA . 1,526 parts In-Stock

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$0.185

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Vyrian

USA . 1,470 parts In-Stock

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$0.195

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Freelance Electronics

USA . 2,896 parts In-Stock

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$0.217

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$0.227

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$0.214

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2,896

$0.217

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Chip Stock

USA . 557,750 parts In-Stock

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Microfarads

USA . 14,175 parts In-Stock

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Resion

USA . 13,960 parts In-Stock

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A2Z Electronics, Inc.

USA . 3,000 parts In-Stock

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R&J Components

USA . 2,990 parts In-Stock

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Prism Electronics

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Sensible Micro Corp

USA . 1,257 parts In-Stock

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$0.049

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$0.045

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1,257

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$0.049

$0.045

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Mil-Aero Solutions, Inc.

USA . 1,008 parts In-Stock

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1,008

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Martec Srl

Italy . 953 parts In-Stock

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ComSIT Distribution GmbH

Germany . 715 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Semi Source

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Corohmni

South Africa . 237 parts In-Stock

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$0.049

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237

$0.049

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Corphita

USA . 1,741 parts In-Stock

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$0.176

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Metaverse IC Inc.

Canada . 79,000 parts In-Stock

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Continental Prestige Electronics

USA . 59,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,282 parts In-Stock

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TANS Electronics

Latvia . 7,612 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 3,708 parts In-Stock

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SupplyDigital Components

Austria . 2,670 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Unleash the power of innovation with the MMSD301T1 by Onsemi. As a top-tier manufacturer in the industry, Onsemi guarantees quality and reliability in every product they create. The MMSD301T1 falls under the category of Microwave Mixer & Detector Diodes, offering a wide range of applications from very high frequency to ultra high frequency. With its compact package design and superior performance, this diode is the perfect solution for your electronic needs. Trust in Onsemi to deliver cutting-edge technology that exceeds expectations and propels your projects to new heights. Elevate your creations with the MMSD301T1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diode, ensuring longevity and easy handling.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows the diode to operate efficiently in a wide range of frequencies, making it versatile for different applications.

Maximum Diode Capacitance: 1.5 pF

Low capacitance ensures minimal signal loss and distortion, improving overall performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and space-saving in various electronic devices.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable performance in demanding environments.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability for easy installation and maintenance.

Maximum Power Dissipation: 0.225 W

High power dissipation capability allows the diode to handle large amounts of power without overheating.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Withstands high reverse voltages, protecting the diode from damage and ensuring long-term reliability.

Technical Specifications

Microwave Mixer & Detector Diodes MMSD301T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMSD301T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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