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MMSD701T1

Onsemi

MMSD701T1 by Onsemi

MMSD701T1 by Onsemi is a single Schottky mixer diode with a max forward voltage of 1V. It operates in the very high frequency to ultra high frequency band, suitable for microwave applications. This surface-mount diode has a max power dissipation of 0.225W and can handle up to 70V repetitive peak reverse voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Bristol Electronics

USA . 23,984 parts In-Stock

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Atlantic Semiconductor

USA . 23,984 parts In-Stock

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Digiode

USA . 1,704 parts In-Stock

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Vyrian

USA . 1,062 parts In-Stock

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Semi Source

USA . 6 parts In-Stock

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SupplyDigital Components

Austria . 7,862 parts In-Stock

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Kulean Microsystems

USA . 7,847 parts In-Stock

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Problanco Electronics

Mexico . 6,912 parts In-Stock

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Corphita

USA . 2,351 parts In-Stock

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TANS Electronics

Latvia . 691 parts In-Stock

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Corohmni

South Africa . 371 parts In-Stock

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UHIMA Technologies

Türkiye . 70 parts In-Stock

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Overview

Unleash the power of very high frequency to ultra high frequency applications with the MMSD701T1 by Onsemi. This top-notch microwave mixer & detector diode, encased in a durable plastic/epoxy package, offers unparalleled performance and reliability. Ideal for a range of applications, this single-configured diode boasts a small outline package style and dual terminal position for easy installation. With a maximum diode capacitance of 1pF and Schottky technology, customers can trust in the quality and precision of this product. Elevate your projects with the MMSD701T1 and experience the unmatched value it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring a long lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows for high frequency operation, making this product suitable for advanced microwave applications.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures fast response time and efficient operation in high frequency circuits.

Maximum Power Dissipation: 0.225 W

Capable of handling moderate power levels without overheating, ensuring reliable performance.

Diode Type: MIXER DIODE

Specifically designed for mixing signals in microwave applications, making it a perfect fit for this product category.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speeds, enhancing the efficiency of the product.

Technical Specifications

Microwave Mixer & Detector Diodes MMSD701T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMSD701T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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