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BA591

NXP Semiconductors

BA591 by NXP Semiconductors

BA591 by NXP Semiconductors is a single microwave mixer diode with a very high frequency band. It features a max diode capacitance of 1.05 pF and operates in temperatures ranging from -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

Median Price

$13.190

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 120 parts In-Stock

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$13.190

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120

$13.190

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L-com US

USA . 120 parts In-Stock

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$13.190

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$11.340

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$10.420

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120

$13.190

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$10.420

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Mouser Electronics

USA . 11 parts In-Stock

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$18.440

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$14.840

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$14.410

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11

$18.440

$14.840

$14.410

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Verical

USA . 120 parts In-Stock

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$11.343

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$11.343

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Digiode

USA . 342 parts In-Stock

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$10.820

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342

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Chip Stock

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Vyrian

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Bristol Electronics

USA . 2,062 parts In-Stock

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Ashlea Components Ltd

UK . 1,672 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,490 parts In-Stock

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Anansix

USA . 139 parts In-Stock

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Corphita

USA . 3,924 parts In-Stock

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$10.251

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Kepictronics

USA . 60,000 parts In-Stock

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Lixinc

USA . 19,268 parts In-Stock

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UNI Independent Distributors

Spain . 7,341 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,303 parts In-Stock

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Northwest PG Solutions

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Alle Elektronik GmbH

Germany . 1,460 parts In-Stock

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Perfect Parts

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Native Components

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Overview

Enhance your microwave applications with the BA591 by NXP Semiconductors. Designed with quality in mind, this mixer diode offers very high frequency performance and is ideal for a wide range of uses. With a small outline package style and dual terminals, this product provides convenience and reliability. Experience the benefits of its efficient design and superior performance, making it a valuable addition to your projects. Choose the BA591 for top-notch quality and unmatched advantages in the field of microwave mixer and detector diodes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency signals, offering efficient and reliable performance.

Maximum Diode Capacitance: 1.05 pF

Low capacitance allows for faster response times and improved signal quality.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Terminal Finish: Tin (Sn)

Tin finish provides good conductivity and solderability for easy installation.

Diode Type: MIXER DIODE

Specifically designed for mixing and detecting signals, ensuring accurate and efficient performance.

Technical Specifications

Microwave Mixer & Detector Diodes BA591 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.05 pF

Nominal Diode Capacitance:

.8 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BA591 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.60

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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