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MBD501

Onsemi

MBD501 by Onsemi

The Onsemi MBD501 is a single mixer diode with Schottky technology, ideal for ultra high frequency applications. Featuring a max diode capacitance of 1 pF, it comes in a round cylindrical package made of plastic/epoxy material. With two terminals and through-hole terminal form, this diode is designed for microwave mixing and detection tasks.

Median Price

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Lifecycle Status

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14

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Electronic Expediters

USA . 6,961 parts In-Stock

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Vyrian

USA . 2,097 parts In-Stock

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R&J Components

USA . 1,895 parts In-Stock

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Digiode

USA . 766 parts In-Stock

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DF Sales Co.

USA . 640 parts In-Stock

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640

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DF Sales Co.

USA . 640 parts In-Stock

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640

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ComSIT Distribution GmbH

Germany . 221 parts In-Stock

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North Shore Components

USA . 192 parts In-Stock

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Sunrise Surplus Inc.

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Sogenti Electronics

Canada . 50 parts In-Stock

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Problanco Electronics

Mexico . 6,731 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

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Corohmni

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Infinite Electronics LLP (Excess)

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Overview

Unlock the power of high-frequency applications with the MBD501 by Onsemi. Crafted with precision and quality, this microwave mixer & detector diode offers unparalleled performance and reliability. Whether you're in the telecommunications, aerospace or medical industry, this product provides exceptional value and benefits. Experience seamless integration, optimal efficiency, and superior results with the MBD501. Elevate your projects to new heights with this innovative solution from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or compact applications.

Config: SINGLE

The single configuration simplifies the setup and reduces the complexity of the system.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band allows for high-performance signal processing and communication applications.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal signal distortion and high frequency operation.

Package Shape: ROUND

The round shape provides efficient signal propagation and minimizes signal losses.

No. of Terminals: 2

The two terminals simplify the connection process and enhance the overall ease of use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for easy installation and integration into existing systems.

Terminal Position: BOTTOM

The bottom terminal position facilitates secure connections and ensures stability during operation.

Diode Type: MIXER DIODE

The mixer diode type enables efficient signal mixing and frequency conversion processes.

Technology: SCHOTTKY

The Schottky technology offers high-speed switching and low forward voltage drop for improved performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical support and reliable connections.

Diode Element Material: SILICON

The silicon diode element material ensures high reliability and temperature stability for consistent performance.

Technical Specifications

Microwave Mixer & Detector Diodes MBD501 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-226AC

JESD-30 Code:

O-PBCY-T2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBD501 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-00-359-8107, 5961003598107, 5961-99-773-7577, 5961997737577

NIIN

003598107, 997737577

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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