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MMBD353LT3

Onsemi

MMBD353LT3 by Onsemi

MMBD353LT3 by Onsemi is a microwave mixer & detector diode with 2 elements, ultra high frequency band, and 1 pF diode capacitance. It is used in applications requiring small outline surface mount packages for high-frequency signal processing at up to 125 °C operating temperature.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 849 parts In-Stock

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Digiode

USA . 321 parts In-Stock

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Problanco Electronics

Mexico . 5,077 parts In-Stock

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Kulean Microsystems

USA . 4,673 parts In-Stock

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SupplyDigital Components

Austria . 3,527 parts In-Stock

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TANS Electronics

Latvia . 1,424 parts In-Stock

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UHIMA Technologies

Türkiye . 834 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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Corphita

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Overview

Experience superior performance with the MMBD353LT3 by Onsemi, a top-of-the-line Microwave Mixer & Detector Diode. Manufactured using high-quality materials and advanced technology, this product offers exceptional reliability and precision. Ideal for ultra-high frequency applications, this diode boasts a compact design and efficient operation. With its series connected elements and center tap configuration, the MMBD353LT3 delivers unparalleled value and benefits to customers looking for high-performance microwave solutions. Upgrade your project with this innovative diode and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for efficient signal mixing and detection in microwave applications.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in an ultra high frequency band ensures high performance and sensitivity for detecting microwave signals accurately.

Surface Mount: YES

Being surface mountable simplifies the integration of the diodes into circuit boards, saving space and facilitating assembly.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal interference with signal processing, resulting in accurate and reliable performance.

Package Shape: RECTANGULAR

The rectangular package shape provides easy alignment and installation, making it convenient for circuit board placement.

No. of Terminals: 3

Having 3 terminals allows for flexible connectivity and precise control over signal input and output.

Package Style (Meter): SMALL OUTLINE

The small outline package style conserves space on circuit boards, making it suitable for compact electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the diodes can withstand harsh environmental conditions and maintain reliable performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and electrical conductivity, enabling secure connections in circuit assemblies.

Terminal Position: DUAL

Having dual terminal positions allows for flexible mounting options and compatibility with different circuit configurations.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation capability ensures stable operation and prevents overheating during use.

Peak Reflow Temperature °C: 235

The high peak reflow temperature tolerance simplifies assembly processes by enabling reliable soldering of the diodes to circuit boards.

Diode Type: MIXER DIODE

Designed specifically as mixer diodes for signal processing applications, ensuring precise frequency conversion and detection.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy installation and soldering, reducing assembly time and ensuring secure connections.

No. of Elements: 2

Having 2 diode elements enables efficient signal mixing and detection for improved performance in microwave applications.

Diode Element Material: SILICON

The silicon diode element material offers high sensitivity and reliability, making it suitable for demanding microwave signal processing tasks.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD353LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD353LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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